Abstract of the Disclosure

A junction capacitor for integrated circuits which comprises a buried layer of one conductivity type semiconductor material in a block of semiconductor material of opposite conductivity type to form rectifying junctions which extend on both sides of the layer to provide a junction having a relatively large area. A post of the one conductivity type extends through the block to provide a means for connecting to the layer the post forming a second junction of much smaller area with the block. the junctions form a capacitor in series between ohmic connections made to the block and buried layer. On application of a voltage between the layer and the block, the depletion layers of the first junction around the layer merge to cause the total junction area and therefore capacitance for the device to be that of the post region only.

• Figure 1 is a cross-sectional view of an integrated circuit embodying the junction capacitor of the present invention.
• Figure 2 is a top view of Figure 1.
• Figure 3 is a circuit embodying the capacitor of the present invention and
• Figure 4 are characteristic curves useful in understanding the invention......

 Citations [54]:
  
3,253,197  05/1966  Haas
3,283,223  11/1966  Witt
3,354,362  11/1967  Zuleeg