PATENT COVER GRAPHIC

United States Patent 3,457,632
July 29, 1969

Process For Implanting Buried Layers In Semiconductor Devices
Russell P. Dolan Jr.
Sven A. Roosild

Filed October 7, 1966
Image of US PATENT 3,457,632

Abstract of the Disclosure

A method of forming semiconductor electronic devices by ionic bombardment including the steps of placing an ion absorbing mask of semiconductor substrate; bombarding the substrate with monoenergetic ions and heating the material to repair radiation damage
Figure descriptions: cover graphic

  • Figure 1 is a side elevational view, partly in section of the apparatus utilized in this invention.
  • Figure 2 is a cross-sectional view of a semiconductor device produced by this invention.
 

 Citations [54]:
  
2,735,948  02/1956  Sziklai
2,787,564  04/1957  Shockley
2,750,541  06/1956  Ohl
3,293,084  12/1966  McCaldin
National Museum of American History
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