PATENT COVER GRAPHIC


United States Patent 3,460,003
August 5, 1969

Metalized Semiconductor Device With Fired-On Glaze Consisting Of...
Aram K. Hampikian
Oscar D. Biddy Jr.


Filed January 30, 1967
Image of US PATENT 3,460,003

Abstract of the Disclosure

A semiconductor chip device doped with N- and P-type impurities and connected with appropriate conductors is encapsulated by a lead-borosilicate glass composition to protect from atmospheric contamination.
Figure descriptions: cover graphic

  • Figure 1 shows a cross-sectional view of an N-doped silicon wafer.
  • Figure 2 shows a cross-sectional view of an N-doped silicon wafer with an oxide layer.
  • Figure 3 shows a cross-sectional view of an N-doped silicon wafer coated with photoresist, masked and exposed to appropriate light.
  • Figure 4 shows a cross-sectional view of an N-doped silicon wafer with an etched window to the silicon surface ready for doping.
  • Figure 5 shows a cross-sectional view of a silicon wafer with a P dopant deposit.

 Citations [54]:
  
3,261,075 07/1966 Carman 3,270,256 08/1966 Mills 3,303,399 02/1967 Hoogendorn
National Museum of American History
HomeSearchChip TalkChip FunPatentsPeoplePicturesCreditsCopyrightComments