Abstract of the Disclosure

A semiconductor chip device doped with N- and P-type impurities and connected with appropriate conductors is encapsulated by a lead-borosilicate glass composition to protect from atmospheric contamination.

• Figure 1 shows a cross-sectional view of an N-doped silicon wafer.
• Figure 2 shows a cross-sectional view of an N-doped silicon wafer with an oxide layer.
• Figure 3 shows a cross-sectional view of an N-doped silicon wafer coated with photoresist, masked and exposed to appropriate light.
• Figure 4 shows a cross-sectional view of an N-doped silicon wafer with an etched window to the silicon surface ready for doping.
• Figure 5 shows a cross-sectional view of a silicon wafer with a P dopant deposit.

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