PATENT COVER GRAPHIC


United States Patent 3,460,010
August 5, 1969

Thin Film Decoupling Capacitor Incorporated In An Integrated Circuit Chip, And Process For Making Same
Robert J. Domenico
Robert H.F. Lloyd


Filed May 15, 1968
Image of US PATENT 3,460,010

Abstract of the Disclosure

A novel thin film decoupling capacitor is incorporated in the unused side of an integrated circuit chip, one side of said capacitor comprising a metallic film, the second side of said capacitor comprising semiconductor columns of a first conductivity type embedded in a semiconductor substrate of a second conductivity type. The surface of said columns adjacent said metallic film are indented and fave a dielectric material contained in the indentations. The metallic plane is in contact with the dielectric material and also with portions of the bottom surface of the substrate adjacent said indentations. A low resistance contact to the columnar side of the capacitor is made by forming a semiconductor layer of the same conductivity type as said columns over the top of said substrate, forming a second semiconductor layer of the opposite conductivity type to said first layer over said first layer, and forming a conductive path of the same conductivity type as said first layer from the top of said second layer to said first layer. Thus, a low resistance contact is made from the top of said second layer, where the integrated circuits themselves will be located, to the columnar side of the capacitor. A novel process for making the described semiconductor body is included, comprising a series of diffusion steps including controlled out-diffusions of buried diffusions.
Figure descriptions: cover graphic

  • Figure 1 is an isometric view shoing the thin film capacitor incroporated in the unused side of an integrated circuit chip.
  • Figure 2 is an isometric broken view of the substrate or semiconductor wafer within which the columnar side of the capacitor will be formed.
  • Figure 3 is a brokin isometric view of semiconductor substrate or wafer of Figure 2 showing the columns of a first conductivity type embedded therein.
  • Figure 4 is the same as Figure 3 with the inclusion of buried diffusions used in the fabrication of said diffused semiconductor collars.

 Citations [54]:
  
3,333,326 08/1967 Thomas 3,393,349 07/1968 Huffman 3,401,450 09/1968 Godejahn
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