Abstract of the Disclosure

An elongated semiconductor device in which contacts are placed across the junction at both ends and a plasma effected by exciting the holes and electrons present in the P and N material to energize the electrons of the bonding atoms of the crystal to the conduction band.

• Figure 1 is a sectional view of a device embodying the invention.
• Figure 2 is a test circuit used to illustrate the invention.
• Figure 3 is a curve illustrating the invention.
• Figure 4 is a sectional view of a device illustrating another embodiment of the invention.
• Figure 5 is a test circuit used to illustrate the performance of the device of Figure 4.

 Citations [54]:
  
3,158,746  11/1964  Lehovec
3,283,221  11/1966  Heiman