PATENT COVER GRAPHIC


United States Patent 3,461,524
August 19, 1969

Method For Making Closely Spaced Conductive Layers
Martin P. Lepselter

Filed November 2, 1966
Image of US PATENT 3,461,524

Abstract of the Disclosure

Method for making a pair of closely spaced semiconductors comprising the steps of depositing successive layers of conductor, filler material, and conductor on a substrate; selectively etching away the filler material and eliminating any exposed pinhole shorts. The method is particularly useful in the fabrication of thin film capacitors and crossovers because of the relative ease with which pinhole shorts can be eliminated.
Figure descriptions: cover graphic

  • Figure 1 is a schematic cross section of a typical structure used to make a capacitor in accordance with the invention.
  • Figure 2 is a cross section of a completed capacitor made in accordance with the invention.
  • Figure 3 is a schematic cross section of a typical structure used to make a thin film crossover in accordance with the inverntion.
  • Figure 4 is a cross section of the complete crossover.

 Citations [54]:
  
1,595,810 08/1929 Allcut 836,812 06/1960 Great Britain 2,607,825 08/1952 Eisler 3,044,160 07/1962 Jaffee 3,234,442 02/1966 Maissel 3,325,882 06/1967 Chiou
National Museum of American History
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