Abstract of the Disclosure

Contamination of the surfaces of semiconductor devices such as diodes, rectifiers, and transistors, is obviated by vapor depositing particularly over the junction area, a substance including a major percentage of lead oxide and a minor percentage of at least one metal oxide selected from among tungsten oxide, molybdenum oxide, chromium oxide, and germanium oxide

• Figure 1 and 2 illustrate alternative methods for introducing the peripheral coating according to the invention; and
• Figure 3 shows, in cross-section, a germanium diode incorporating the invention.

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