Abstract of the Disclosure

Method of growing a silicon carbide epitaxial layer on a silicon carbide seed which comprises; providing in a temperature gradient a silicon carbide seed and a source of carbon separated by a layer of molton silicon. Carbon from the carbon source, which is at the higher temperature, is dissolved in the silicon, and epitaxial deposition of silicon carbide takes place on the cooler surface of the seed. An impurity such as buron or aluminum may be included in the silicon layer to provide a doped epitaxial layer

• Figure 1 is a diagrammatic , schematic representation of one embodiment of the invention.

 Citations [54]:
  
2,937,324  05/1960  Kroko
3,205,101  09/1965  Mlavsky
3,301,716  01/1967  Kleinknecht
3,411,946  01/1968  Tramposch