Abstract of the Disclosure

Disclosed is a method for forming an ohmic contact to a small geometry region in a semiconductor integrated circuit by using an insulating layer of different thicknesses. The insulating layer is formed on the integrated circuit with the portion of the insulating layer over the region being thinner than the rest of the insulating layer. During the formation of an opening in the insulating layer the unmasked thinner insulating layer is completely removed while the unmasked thicker insulating layer is only partially removed. A metal contact is then formed on the exposed portion of the region.

• Figure 1 is a schematic diagram of an electronic circuit.
• Figure 2 is a plan view, depicting the layout of all circuit elements, of the circuit of Figure 1 integrated in a semiconductor wafer.

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3,300,339  01/1967  Perri
3,258,606  06/1966  Meadows
2,995,473  08/1961  Levi