Abstract of the Disclosure

A process for heat treating the aluminum metal contact layer and underlying surface portions of a silicon transistor or microcircuit. The aluminum is alloyed, or sintered, with contacting underlying regions of the silicon by raising the temperature of the region to a value (e.g., about 400° C.) substantially below the silicon-aluminum eutectic temperature, through application of a quantity of heat for a relatively short period (e.g., about 2 to 4 seconds) to the side of the body of silicon opposite to the aluminized side.

• Figures 1A, 1B through 5A, 5B are greatly enlarged plan and sectional views of a semiconductive device at separate sequential stages of manufacture leading up to the process steps characteristic of the present invention.
• Figure 6 illustrates, in section, a device as shown in Figures 5A, 5B and, somewhat diagrammatically, apparatus utilized in carrying out the method contemplated by the invention.
• Figure 7 is a further enlarged plan view of a portion of the device shown in Figure 6, and illustrating desirable structural features attained by the method of the present invention.
• Figure 8 is a sectional view taken along the line designated by the arrows 8-8 applied to Figure 7.
• Figures 9 and 10 are views similar to Figures 7 and 8, respectively, but showing structural defects that the method of the present invention overcomes.

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