PATENT COVER GRAPHIC

United States Patent 3,470,039
September 30, 1969

Continous Junction Growth
Paul C. Goundry
James C. Boatman

Filed December 21, 1966
Image of US PATENT 3,470,039

Abstract of the Disclosure

This invention relates to semiconductor material preparation and more particularly to a method of continuously joining semiconductor materials of different conductivities to produce continuous junction growth at the interface of different materials.
Figure descriptions: cover graphic

  • Figure 1 is a diagrammatic representation partially in cross section of apparatus suitable for direct growth from a melt of monocrystalline semiconductor material containing a continuous P-N junction.
  • Figure 2 depicts a suitable guide for shaping the molten semiconductor material. 

 Citations [54]:
  
2,743,200  04/1956  Hannay
3,124,489  03/1964  Vogez
3,198,671  08/1965  Dikhoff
3,261,722  07/1966  Kozler
National Museum of American History
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