Abstract of the Disclosure

An insulated-gate field-effect device can be rendered substantially free from the effects of migrating ions in the dielectric layer thereof by applying a second dielectric layer over the gate electrode of that insulate-gate field-effect device, by applying an auxiliary electrode over that second dielectric layer, by applying a D.C. voltage to the resulting multi-layer composite structure while that multi-layer composite structure is held at an elevated temperature to cause temperature-freed ions in the dielectric layers thereof to drift toward that auxiliary electrode, and by permitting that multi-layer composite structure to cool and substantially immobilize those temperature-freed ions out of the field between the gate electrode and the semi-conductor of that insulated-gate field-effect device.

• Figure 1 is a plan view of one preferred embodiment of the insulated-gate field-effect device that is made in accordance with the principles and teachings of the present invention.
• Figure 2 is a sectional view, on a larger scale, through part of the insulated-gate field-effect device shown in Figure 1 and it is taken along the plane indicated by the line 2-2 in Figure 1.
• Figure 3 is another sectional view through the insulated-gate field-effect device shown in Figure 1, it is on the scale of Figure 2, and it is taken along the plane indicated by the line 3-3 in Figure 2.

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3,384,792  05/1968  Kazan
3,386,163  06/1968  Brennemann