Abstract of the Disclosure

A uniformly monocrystalline germanium layer is deposited on a silicon substrate by a process involving the initial growth of an epitaxial silicon layer to form a perfect surface for the subsequent growth of germanium. The epitaxial silicon wafer is then cooled to a temperature below 670° C., followed by the nucleation and growth of germanium. Germane (GeH₄) is the only compound found suitable as a source of germanium for the initial nucleation of the monocrystalline germanium film. After an initial germanium growth of at least 0.2 micron, subsequent growth is carried out using the previously known technology, which includes the use of temperatures above 670° C., and the use of germanium tetrachloride, trichlorogermane or other germanium compounds as a source of germanium.

• Figure 1 is a diagrammatic representation of a suitable system for the production of epitaxial films in accordance with the invention.
• Figures 2, 3 and 4 are enlarged cross-sectional views of a semiconductor wafer, illustrating a sequence of processing steps carried out in accordance with the present invention.

 Citations [54]:
  
3,341,376  09/1967  Spenke