Abstract of the Disclosure

A process for enhancing the surface morphology of epitaxially grown semiconductive layers is disclosed. Smooth growth of epitaxial layers is insured by misorienting the crystallographic plane of a substrate relative to a major crystallographic plane. Specific orientations of semiconductor substrate which provide smooth epitaxially grown surfaces include 2-6° off the orientations [111]->[110], [100]->[110], [100[->[111], 8-25° off the [100]->[110] and 10-22° off [100]->[111]. The angle specified indicate the number of degrees of misorientation from a major crystallographic axis and the unique misorientation is further established by specifying the relationship of the misorientation to the nearest specified different major crystallographic axis. The process involved includes the steps of depositing a semiconductive material on a semiconductor substrate, the latter having one of the orientations specified above.

• Figure 1a is a cross-sectional view of a semiconductor substrate having an epitaxially deposited film on a surface thereof which is mis-oriented 2-6° off the [111] orientation toward the nearest [110] orientation.
• Figure 1b is a cross-sectional view of a semiconductor substrate, the upper surface thereof having an orientation 2-6° off the [100] orientation toward the nearest [110] orientation.
• Figure 1c is a cross-sectional view of a semiconductor substrate, the upper surface thereof having an orientation 2-6° off the [100] orientation toward the nearest [111] orientation.
• Figure 1d is a cross-sectional view of a semiconductor substrate, the upper surface thereof having an orientation 10-22° off the [100] orientation toward the nearest [111] orientation.
• Figure 1e is a cross-sectional view of a semiconductor substrate, the upper surface thereof having an orientation 8-25° off the [100] orientation toward the nearest [110] orientation.

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