PATENT COVER GRAPHIC


United States Patent 3,476,620
November 4, 1969

Fabrication Of Diffused Junction Semiconductor Devices
Joan M. Crishal
James P. Sandstrom


Filed December 13, 1962
Image of US PATENT 3,476,620

Abstract of the Disclosure

A boron diffusion process having highly controllable characteristics and utilizing vapors of n-propyl borate and ethyl silicate whereby a borosilicate glass coating is formed on a semiconductor body and boron atoms are diffused from the glass coating into the semiconductor body. An oxide layer is deposited over the borosilicate glass layer before the diffusion to protect the device and aid in controlling the boron diffusion.
Figure descriptions: cover graphic

  • Figure 1 is a schematic diagram showing a first embodiment of apparatus suitable for performing the present invention boron diffusion technique.
  • Figure 2 is a schematic diagram showing a second embodiment of an apparatus suitable for performing the present invention boron diffusion technique.

 Citations [54]:
  
3,055,776 09/1962 Stevenson 3,145,126 08/1964 Hardy 3,200,019 08/1965 Scott
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