Abstract of the Disclosure

Method of producing a structure composed of mutually insulated semiconductor regions for integrated circuits, which comprises placing a plurality of semiconductor bodies besides one another in face-to-face contact upon a heat-resistant support, said bodies having an insulating coating at least on the entire surface not contacting the support; then depositing a crystalline material upon the semiconductor bodies and the support while preserving said insulating coating and thereby completely embedding said semiconductor bodies and bonding them together to a single integral structure; and thereafter separating said structure from said support.

• Figure 1 shows an assembly of components in cross section at an intermediate stage of the method.
• Figure 2 shows a completed structure made according to the invention, also in cross section.

 Citations [54]:
  
3,332,137  07/1967  Kenny
3,343,255  09/1967  Donovan
3,381,182  04/1968  Thorton