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United States Patent 3,481,781 December 2, 1969 Silicate Glass Coating Of Semiconductor Devices Werner Kearn Filed March 17, 1967 |
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Abstract of the DisclosureA silicate glass coating is synthesized by chemical vapor phase reaction on the surface of an object by heating the object to a temperature in the range of 300° C. to 600° C. in an atmosphere consisting of a mixture of an inert carrier gas, silane (SiH4) as a source of silicon for silicon dioxide, other hydrides and/or alkyls as sources of ions for secondary oxides, and oxygen. For example, a borosilicate glass consisting of a mixture of silicon dioxide (SiO2) and boron trioxide (B2O3) is synthesized from silane and diborane (B2H6), by oxidation of these hydrides at elevated temperature. |
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Citations [54]:3,019,137 01/1962 Hawlet 3,330,694 07/1967 Black 3,117,832 01/1964 Sterling 3,396,052 08/1968 Rand 3,228,812 01/1966 Blake 3,306,768 02/1967 Peterson |