Abstract of the Disclosure

Process for forming a continuous coating of silicon upon an inert substrate by contacting the substrate with a mixture of silane and hydrogen at an elevated temperature thereby depositing polycrystalline silicon on the substrate and thereafter contacting the substrate with a head decomposable silicon halide to continue the growth of polycrystalline silicon.

• Figure 1 is a schematic elevational view of one apparatus suitable for use in practicing the process of this invention.
• Figure 2 is a schematic elevational view in cross section of one application of the coatings produced by the process of this invention.

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