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United States Patent 3,484,312 December 16, 1969 Method For Forming Alloy Contacts To Gallium Arsenide Felix Ermanis Bertram Schwartz Filed December 28, 1966 |
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Abstract of the DisclosureAlloy contacts are formed upon gallium arsenide by coating the contact region with a divalent chloride or bromide of tin or lead and heating the resultant coating for a time period sufficient to decompose the chloride or bromide and to effect alloying of free metal with the gallium arsenide. |
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Citations [54]:2,887,416 05/1959 van Amstel 3,390,024 06/1968 Stein |