PATENT COVER GRAPHIC


United States Patent 3,491,434
January 27, 1970

Junction Isolation Diffusion
Richard L. Cunningham
Harold G Carlson


Filed January 28, 1965
Image of US PATENT 3,491,434

Abstract of the Disclosure

Disclosed is a method for forming planar semiconductor devices in which a region is formed at the existing intersection of a rectifying junction with the surface of the substrate by diffusing impurities through an aperture in an insulating layer on the surface of the substrate. The rectifying junction is then shifted from its original position to a new position of lower impurity concentration.
Figure descriptions: cover graphic

  • Figures 1A-1G are elevational views in section illustrating the process steps according to the invention in fabricating a mesa epitaxial semiconductor diode, with Figure 1G showing the finished device.

 Citations [54]:
  
2,654,059 09/1953 Shockley 3,183,129 05/1965 Tripp 2,980,830 04/1961 Shockley 3,237,062 02/1966 Murphy 2,146,135 08/1961 Senitzky 3,261,727 07/1966 Dehmelt 3,146,135 08/1964 Chih-tang San 3,226,614 12/1965 Haenichen 3,183,128 05/1965 Leisitko
National Museum of American History
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