PATENT COVER GRAPHIC


United States Patent 3,492,549
January 27, 1970

Bistable Electroluminescent Insulated Gate Field Effect Semiconductor Device
John L. Janning

Filed April 17, 1968
Image of US PATENT 3,492,549

Abstract of the Disclosure

The bistable electroluminescent insulated gate field effect semiconductor device of the present invention comprises a bistable insulated gate field effect semiconductor device having an upper source electrode layer insulated from a lower rigid drain electrode layer, an electroluminescent layer, and a transparent electrode layer having been built upon the opposite side of said rigid drain electrode layer.
Figure descriptions: cover graphic

  • a perspective view of the bistable electroluminescent insulated gate field effect semiconductor device of the present invention.

 Citations [54]:
  
3,400,383 09/1968 Meadows 3,385,731 05/1968 Weimer 3,173,014 03/1965 Fenner 3,307,089 02/1967 Yamashita 3,384,792 05/1968 Kazan
National Museum of American History
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