Abstract of the Disclosure

The bistable electroluminescent insulated gate field effect semiconductor device of the present invention comprises a bistable insulated gate field effect semiconductor device having an upper source electrode layer insulated from a lower rigid drain electrode layer, an electroluminescent layer, and a transparent electrode layer having been built upon the opposite side of said rigid drain electrode layer.

• a perspective view of the bistable electroluminescent insulated gate field effect semiconductor device of the present invention.

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