PATENT COVER GRAPHIC


United States Patent 3,506,891
April 14, 1970

Epitaxial Planar Transistor
Robert I. Luce

Filed December 26, 1967
Image of US PATENT 3,506,891

Abstract of the Disclosure

Planar transistor formed in wafer having sequentially grown epitaxial layers with lower layer doped for desired resistivity of collector region and upper layer, which has base and emitter regions diffused therein, made substantially intrinsic to reduce carrier compensation in base region.
Figure descriptions: cover graphic

  • Figure 1A shows a cross sectional view of a prior art epitaxial planar transistor.
  • Figure 1B shows the distribution of impurity components in said transistor.
  • Figure 1C shows the resultant impurity distribution in said transistor.
  • Figure 2A shows in cross sectional form an improved epitaxial planar transistor according to the invention.
  • Figure 2B shows the distribution of impurity components in said transistor.
  • Figure 2C shows the resultant impurity distribution in said transistor.

 Citations [54]:
  
3,299,329 01/1967 Pollock 3,312,881 04/1967 Yu 3,271,201 09/1966 Pomerantz 3,370,995 02/1968 Lowery 3,398,335 08/1968 Dill
National Museum of American History
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