Abstract of the Disclosure

This specification discloses a method of manufacturing a semiconductor device having its silicon substrate surface covered with a layer consisting of a mixture of P₂O₅ and SiO₂. In this method, when the mixture layer of P₂O₅ and SiO₂ is formed on the silicon substrate of which the surface is partially covered with a SiO₂ layer, by supplying a gasified phosphorus compound onto said substrate together with a carrier gas, the mixture layer is made to be thicker on the SiO₂ layer than on the exposed silicon surface by controlling the quantity of oxygen contained in said carrier gas, thereafter the substrate is immersed in an etchant to uniformly etch said mixture layer so that the thinner mixture layer formed on said silicon surface is removed and thus the silicon surface is again exposed while the mixture layer formed on said layer is left, and then metal electrodes reaching said silicon surface again exposed are formed by, for example, the evaporation method. Thus, there can be obtained a semiconductor device having a very minute electrode structure.

• Figures 1a through 1b are sectional views illustrating the fabrication of a semiconductor device according to the prior art.
• Figures 2a through 2b are sectional views illustrating the manufacture of a semiconductor device in accordance with the present invention.
• Figure 3 is a schematic view showing an apparatus adapted to be used in the method of manufacturing a semiconductor device in accordance with the present invention.

 Citations [54]:
  
3,394,037  07/1968  Robinson