PATENT COVER GRAPHIC


United States Patent 3,517,279
June 23, 1970

Face-Bonded Semiconductor Device Utilizing Solder Surface Tension Balling Effect
Koichi Ikeda
Katsuji Minagawa
Shigezo Tanake


Filed September 1967
Image of US PATENT 3,517,279

Abstract of the Disclosure

An improved semiconductor device and method for making the same by the face-bonded technique, in which metallic layer electrodes of the semiconductor element and metallic layer terminals of a substrate to which the element is bonded are formed with a predetermined pattern configuration having dimensions related to the surface tension characteristics of the solder employed in the bonding process.
Figure descriptions: cover graphic

  • Figure 1a is a plan view of a silicon transistor element having an electrode pattern according to this invention.
  • Figure 1b is a cross-sectional view of the transistor element of Figure 1a after being provided with the solder protrusions according to this invention.
  • Figure 2 is a plan view of a substrate for the transistor element of Figure 1.
  • Figure 3 is a cross-sectional view of an assembly made by face-bonding the transistor element of Figure 1 to the substrate of Figure 2.

 Citations [54]:
  
3,380,155 04/1968 Burks 3,287,610 11/1966 Reber 3,292,240 12/1966 McNutt 3,344,323 09/1967 Eiathoven
National Museum of American History
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