PATENT COVER GRAPHIC


United States Patent 3,520,722
July 14, 1970

Fabrication Of Semiconductive Devices With Silicon Nitride Coatings
J.H. Scott Jr.

Filed May 10,1967
Image of US PATENT 3,520,722

Abstract of the Disclosure

The interface instability of semiconductor devices having a silicon nitride coating on a surface of a semiconductive silicon body is eliminated by heating the body in a nitrogen-containing ambient such as ammonia prior to the deposition of the silicon nitride coating.
Figure descriptions: cover graphic

  • Figure 1 is a cross-sectional view of a semiconductor device fabricated according to the invention.
  • Figure 2 is a graph showing the variation in capacitance with applied voltage for a test body comprising a silicon nitride coating on a crystalline semiconductive silicon body according to the prior art.
  • Figure 3 is a graph showing the variation in capacitance with applied voltage for a test body comprising a silicon nitride coating deposited on a crystalline semi-conductive silicon body according to the invention.

 Citations [54]:
  
3,149,398 09/1964 Sprague et al 3,200,015 10/1965 Kuntz 3,246,214 04/1966 Hugle 3,422,321 01/1969 Tombs
National Museum of American History
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