PATENT COVER GRAPHIC


United States Patent 3,534,235
October 13, 1970

IGFET With Offset Gate And Biconductivity Channel Region
Robert W. Bower
Hans G. Dill


Filed April 17, 1967
Image of US PATENT 3,534,235

Abstract of the Disclosure

Metal-oxide-semiconductor field effect transistor having an insulated gate extending partly over the channel region between the source and drain with a shallow conduction channel layer formed by ion implantation in the portion of the channel region not covered by the gate.
Figure descriptions: cover graphic

  • Figure 1 is a plan view of a field effect device according to the invention at an initial step in the manufacture thereof.
  • Figure 2 is a cross-sectional elevational view of the device shown in Figure 1 taken along the line 2-2 thereof.
  • Figure 3 is a plan view of the device shown in Figure 2 at a further stage in fabrication thereof.
  • Figure 4 is a plan view of the device shown in Figure 3 at still another stage in the fabrication thereof.
  • Figure 5 is a cross-sectional elevational view of the device shown in Figure 4 taken along the line 5-5 thereof.

 Citations [54]:
  
3,411,199 11/1968 Heiman 3,296,508 01/1967 Hofstein 3,305,708 02/1967 Ditrick 3,434,021 03/1969 Hofstein
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