PATENT COVER GRAPHIC


United States Patent 3,538,398
November 3, 1970

Semiconductor Element With Improved Guard Region
Gerald Whiting

Filed December 4, 1967
Image of US PATENT 3,538,398

Abstract of the Disclosure

A semiconductor element having a first region of a first type of conductivity and a second region of an opposite type of conductivity, which regions define therebetween a first P-N junction terminating peripherally in a surface of the element, is provided with an additional region of the first type of conductivity which forms a guard junction. The guard region is segmented and is located adjacent portions of the P-N junction at which, but for the presence of the guard region , the element would be most susceptible to surface breakdown
Figure descriptions: cover graphic

  • Figure 1 schematically illustrates in plan view a conventional semi-conductor embodiment and the form of depletion region normally associated therewith.
  • Figure 2 to Figure 5 similarly illustrate embodiments derived from that of Figure 1 in accordance with the first mentioned form of the invention.
  • Figure 6 schematically illustrates in plan view an embodiment in accordance with the second mentioned form of the invention.

 Citations [54]:
  
3,226,612 12/1965 Haenichen 3,226,613 12/1965 Haenichen 3,226,614 12/1965 Haenichen 3,309,245 03/1967 Haenichen 3,394,037 07/1968 Robinson 3,226,611 12/1965 Haenichen 3,338,758 08/1967 Tremere 3,271,640 09/1966 Moore 3,335,296 08/1967 Smart 3,391,287 07/1968 Kao et al.
National Museum of American History
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