PATENT COVER GRAPHIC


United States Patent 3,544,864
December 1, 1970

Solid State Field Effect Device
Paul Richman

Filed August 4, 1978
Image of US PATENT 3,544,864

Abstract of the Disclosure

An insulated-gate field effect device utilizing a high resistivity substrate in combination with low resistivity semiconductor regions of opposite conductivity type is described. The conducting channel produced by the application of a voltage to the gate electrode contains a PN junction for both positive and negative applied voltages. The location of the PN junction in the device is determined by the gate voltage and, consequently, the device exhibits several different modes of operation.
Figure descriptions: cover graphic

  • Figure 1 is a side view in section of one embodiment of the invention.
  • Figure 2 is an electrical symbol of the embodiment of Figure 1.
  • Figure 3 is a table showing the polarity of the different electrode voltages for the principal modes of operation of the invention.
  • Figure 4 is a curve showing the operating characteristics for one of the principal modes of operation.



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