PATENT COVER GRAPHIC


United States Patent 3,559,281
February 2, 1971

Method Of Reclaiming Processed Semiconductor Wafers
Bobby A. Mayberry
Albert E. Ozias, Jr.


Filed November 27, 1968
Image of US PATENT 3,559,281

Abstract of the Disclosure

A method of processing semiconductor wafers wherein wafers having epitaxial layers containing diffusion regions which have been rejected due to electrical failures or visual defects can be economically processed and reclaimed for further device fabrication. The method utilizes the combination of an epitaxial layer and an overlying oxide layer to essentially eliminate auto-doping by impurities diffused or contained therein during subsequent fabrication steps.
Figure descriptions: cover graphic

  • Figure 1 is a simplified flow chart illustrating a process uing the present invention.
  • Figure 2 is a view in cross section of a semiconductor wafer formed after step 14 of Figure 1.
  • Figure 3 is a view in cross section of a semiconductor wafer formed after step 24 of Figure 1.
  • Figure 4 is a view in cross section of a semiconductor wafer formed after step 25 of Figure 1.
  • Figure 5 is a view in cross section of a semiconductor wafer formed after step 29 of Figure 1.

 Citations [54]:
  
3,184,823 05/1965 Little et al 3,243,323 03/1966 Corrigan et al 3,345,222 10/1967 Nomura et al
National Museum of American History
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