PATENT COVER GRAPHIC


United States Patent 3,560,279
February 2, 1971

Method Of Doping Semiconductor Material
Janos Havas

Filed November 5, 1968
Image of US PATENT 3,560,279

Abstract of the Disclosure

The present invention relates to a method of forming a p-n junction in a semiconductor material wherein the region on one side of said p-n junction has a desired low dopant concentration and wherein said region is formed by doping said semiconductor material from a silicon dioxide layer made from a colloidal silicon dioxide-liquid-dispersion containing boron impurity atoms and counterdopant atoms.
Figure descriptions: cover graphic

  • Figure 1 is a plan view of a silicon crystal which has been doped using only commercial grade colloidal silicon dioxide-liquid-dispersion.
  • Figure 2 is a plan view of a silicon crystal which has been doped using counterdoped commercial grade colloidal silicon dioxide-liquid-dispersion.
  • Figure 3 is a plan view of a silicon crystal which has been doped using counterdoped commercial grade colloidal silicon dioxide-liquid-dispersion.
  • Figure 4 is a graph of the decrease in dopant concentration produced in the silicon crystals of Figures 1, 2 and 3 as a function of different amounts of counterdopant atoms depositied in units of commercial grade colloidal silicon dioxide-liquid-dispersion.
  • Figure 5 is a plan view of a silicon crystal which has been doped using the decrease shown in Figure 4.

 Citations [54]:
  
3,514,348 05/1970 Ku
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