Abstract of the Disclosure

A germanium mesa transistor is fabricated having an epitaxilly grown base region and an aluminum alloy emitter in the epitaxially grown layer spaced from the collector junction, and having a gold-comprising base electrode surrounding the emitter and closely spaced therefrom. The gold contact is formed by photolithographic and selective etching techniques, followed by the formation of the aluminum emitter, which is also formed by photolithographic and selective etching techniques. A key step is the selective removal of the aluminum from the germanium wafer without disturbing the gold contact

• a perspective view of a semiconductor device of the invention shown with leads attached.

 Citations [54]:
  
3,079,254  02/1963  Rowe