PATENT COVER GRAPHIC


United States Patent 4,135,998
January 23, 1979

Method For Forming Pt-Si Schottky Barrier Contact
John J. Gniewek
Timothy M. Reith
Michael J. Sullivan
James F. White


Filed April 26, 1978
Image of US PATENT 4,135,998

Abstract of the Disclosure

Use of a rare gas in combination with oxygen or nitrogen to sputter etch unreacted platinum after formation of a platinum silicide contact structure for the formation of a Schottky Barrier diode in a silicon semiconductor substrate
Figure descriptions: cover graphic

  • a diagrammatic, cross-sectional view of a portion of an integrated circuit encompassing a Schottky barrier structure illustrating one step in the fabrication thereof.

 Citations [54]:
  
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National Museum of American History
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