PATENT COVER GRAPHIC


United States Patent 4,142,195
February 27, 1979

Schottky Barrier Semiconductor Device And Method Of Making Same
David E. Carlson
Christopher R. Wronski
Alfred R. Triano, Jr.


Filed July 30, 1976
Image of US PATENT 4,142,195

Abstract of the Disclosure

A first layer of semiconductor device is of doped amorphous silicon prepared by a glow discharge in a mixture of silane and a doping gas. The first layer is on a substrate having good electrical properties. On the first layer and spaced from the substrate is a second layer of amorphous silicon prepared by a glow discharge in silane. On the second layer opposite the first layer is a metallic film forming a surface barrier junction therebetween, i.e. a Schottky barrier. The first layer is doped so as to make an ohmic contact with the substrate. Preferably the doping concentration of the first layer is graded so the dopant concentration is maximum at the interface of the first layer and the substrate. In a second embodiment of the Schottky barrier semiconductor device an intermediate layer is between and contiguous to both the first layer and the substrate. The intermediate layer facilitates in making ohmic contact between the amorphous silicon and the substrate. Annealing and heat treating steps are performed in the fabrication of the Schottky barrier device to increase device efficiency.
Figure descriptions: cover graphic

  • a cross-sectional view of the first embodiment of the Schottky barrier semiconductor device of the present invention.

 Citations [54]:
  
3,424,661 01/1969 Androshuk et al 3,473,959 10/1969 Ehinger et al 3,958,262 05/1976 Mescin 3,961,997 06/1976 Chu 3,978,333 08/1976 Crisman et al 4,064,521 12/1977 Carlson
National Museum of American History
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