PATENT COVER GRAPHIC


United States Patent 4,163,677
August 7, 1979

Schottky Barrier Amorphous Silicon Solar Cell With Thin Doped Region Adjacent Metal Schottky Barrier
David E. Carlson
Christopher R. Wronski


Filed April 28, 1978
Image of US PATENT 4,163,677

Abstract of the Disclosure

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thinly highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that the p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.
Figure descriptions: cover graphic

  • a Schottky barrier hydrogenated amorphous silicon solar cell with a thin highly doped p-type region adjacent to the Schottky barrier high work function metal.

 Citations [54]:
  
4,064,521 12/1977 Carlson 4,117,506 09/1978 Carlson et al 4,126,150 11/1978 Bell et al
National Museum of American History
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