PATENT COVER GRAPHIC


United States Patent 4,178,605
December 11, 1979

Complementary MOS Inverter Structure
Sheng T. Hsu
James M. Cartwright, Jr.


Filed January 30, 1978
Image of US PATENT 4,178,605

Abstract of the Disclosure

A complementary MOS inverter includes transistors each of which has a dual gate structure with the threshold voltage of the channel nearest the drain of each transistor arranged to be lower than that of the channel nearest the source of each transistor. This arrangement provides the cascode characteristics of dual gate structure, i.e., high breakdown voltage, high voltage gain, low drain output conductance, and relatively fast frequency response, but allows all four gate electrodes of the transistors to be connected in common, thus enabling relatively simple layout.
Figure descriptions: cover graphic

  • a diagrammatic, partial cross-sectional view of one embodiment of the present novel inverter structure.



 Citations [54]:
  
3,436,622 04/1969 Warner 3,641,405 02/1972 Brown et al. 3,715,637 02/1973 Polrier 3,855,610 12/1974 Masuda et al. 3,872,491 03/1975 Hanson et al. 3,898,105 08/1975 Mai et al. 4,052,229 10/1977 Pashley 4,078,947 03/1978 Johnson et al.
National Museum of American History
HomeSearchChip TalkChip FunPatentsPeoplePicturesCreditsCopyrightComments