PATENT COVER GRAPHIC


United States Patent 4,199,773
April 22, 1980

Insulated Gate Field Effect Silicon-On-Sapphire Transistor And Method Of Making Same
Alvin M. Goodman
Charles E. Weitzel


Filed August 29, 1978
Image of US PATENT 4,199,773

Abstract of the Disclosure

A silicon-on-sapphire structure and method for forming the same is described wherein the leakage current attributable to "back channel" leakage is minimized by forming the channel region in such a manner as to have provided therein at least two levels of dopant concentration. The heavier level of dopant concentration is positioned adjacent the silicon/sapphire interface while the lighter level of dopant concentration occupies the remainder of the channel region and is shallower than the heavier level. The classic inversion process takes place in the lightly doped section at the shallow level.
Figure descriptions: cover graphic

  • a cross-sectional view of the completed semiconductor device fabricated in accordance with principles of the invention.

 Citations [54]:
  
4,106,045 08/1978 Nishi 4,143,266 03/1979 Borel et al
National Museum of American History
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