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United States Patent 4,207,586
June 10, 1980

Semiconductor Device Having A Passivating Layer
Jacques Lebailly

Filed December 27, 1977
Image of US PATENT 4,207,586

Abstract of the Disclosure

A semiconductor device includes a passivating layer to reduce and stabilize the surface recombination rate. The passivating layer is of polycrystalline semiconductor material and is of the same conductivity type as that of the underlying semiconductor material. The semiconductor material of the passivating layer differs from that of the underlying semiconductor layer and has a larger energy gap than the underlying layer
Figure descriptions: cover graphic

  • a diagrammatic sectional view of a photodiode according to the invention.

 Citations [54]:
  
3,723,201 03/1973 Keil 954,915 04/1964 United Kingdom 3,783,351 01/1974 Tsukada et al 1,111,991 05/1968 United Kingdom 3,997,907 12/1976 Nakamura et al 4,062,034 12/1977 Matsushita et al 4,114,254 09/1978 Aoki et al 4,121,238 10/1978 Bachmann et al
National Museum of American History
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