PATENT COVER GRAPHIC


United States Patent 4,209,350
June 24, 1980

Method For Forming Diffusions Having Narrow Dimensions Utilizing Reactive Ion Etching
Irving T. Ho
Jacob Riseman


Filed November 3, 1978
Image of US PATENT 4,209,350

Abstract of the Disclosure

A method for forming diffusions having narrow, for example, submicrometer dimensions in a silicon body which involves forming insulator regions on a silicon body, which insulator regions have substantially horizontal surfaces and substantially vertical surfaces. A layer having a desired dopant concentration is formed thereon, both on the substantially horizontal surfaces and the substantially vertical surfaces. Reactive ion etching of the layer acts to substantially remove only the horizontal layer and provides a narrow dimensioned layer having a desired dopant concentration in the substantially vertical surfaces. Heating of the body at a suitable temperature is accomplished so as to produce the movement of the dopant into the silicon body by diffusion to form diffusions having narrow, such as submicrometer dimensions, therein
Figure descriptions: cover graphic

  • an embodiment for forming diffusions into a silicon body in the manufacture of a double diffused field effect integrated circuit device.

 Citations [54]:
  
3,398,029 08/1968 Yasufuku et al 4,103,415 08/1978 Hayes 3,730,787 05/1973 Murphy et al 4,124,933 11/1978 Nicholas 3,966,577 06/1976 Hochberg 4,139,442 02/1979 Bondur et al 4,026,740 05/1977 Owen 4,157,269 06/1979 Ning et al 4,037,307 07/1977 Smith 4,160,991 07/1979 Anantha et al
National Museum of American History
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