PATENT COVER GRAPHIC


United States Patent 4,213,140
July 15, 1980

Insulated-Gate Semiconductor Device
Takeaki Okabe
Isao Yoshida
Minew Kastueda
Hidefumi Ito
Masatomo Furumi
Shikayuki Ochi


Filed July 6, 1978
Image of US PATENT 4,213,140

Abstract of the Disclosure

An insulated-gate semiconductor device wherein a first region is formed in the surface of a semiconductor substrate, the first region having a conductivity type opposite to that of the substrate, two insulated-gate FET's are formed within the first region, the drain of the first insulated-gate FET and that of the second insulated-gate FET are made common, the drains are electrically connected to the first region, and the gate of the first insulated-gate FET and the source of he second insulated-gate FET, and the gate of the second insulated-gate FET and the source of the first insulated-gate FET are respectively connected, thereby to prevent the occurrence of a negative resistance
Figure descriptions: cover graphic

  • a sectional view showing an embodiment of this invention.

 Citations [54]:
  
4,074,151 02/1978 Buckley et al
National Museum of American History
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