PATENT COVER GRAPHIC


United States Patent 4,219,834
August 26, 1980

One-Device Monolithic Random Access Memory And Method Of Fabricating The Same
Ronald P. Esch
Robert M. Folsom
Cheng-Yih Liu
Vincent L. Rideout
Donald A. Soderman
G. Thomas Wenning


Filed November 11, 1977
Image of US PATENT 4,219,834

Abstract of the Disclosure

A dynamic random access memory is fabricated on a monolithic chip of semicond uctor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to th e cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability o f each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said word lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure. The electrical capacitance or storage node structure of each cell has increased electrical charge storage capacity and may be considered as a single capacitor . The single (storage) capacitor of each cell is provided between the source of the field effect transistor, a source of reference potential (reference plane) and the monolithic semiconductor substrate on which the memory is fabricated.
Figure descriptions: cover graphic

  • a cross-sectional view of a portion of the monolithic memory in accordance with the preferred embodiment of the invention.

 Citations [54]:
  
3,811,076 05/1974 Smith
National Museum of American History
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