PATENT COVER GRAPHIC


United States Patent 4,222,792
September 16, 1980

Planar Deep Oxide Isolation Process Utilizing Resin Glass And E-Beam Exposure
Reginald F. Lever
John L. Mauer
Alwin E. Michel
Laura B. Rothman


Filed September 10, 1979
Image of US PATENT 4,222,792

Abstract of the Disclosure

A planar deep oxide isolation process for providing deep wide silicon dioxide filled trenches in the planar surface of a silicon semiconductor substrate, said process comprising the steps:

(a) forming deep wide trenches in the planar surface of the silicon substrate;

(b) forming a thin layer of silicon dioxide on the planar surface of the silicon substrate and the exposed silicon surfaces of said deep wide trenches;

(c) applying resin glass (polysiloxane) to the planar surface of said semiconductor substrate and within said deep wide trenches;

(d) spinning off at least a portion of the resin glass on the planar surface of the substrate;

(e) baking the substrate at a low temperature;

(f) exposing the resin glass contained within the deep wide trenches of substrate to the energy of an E-beam;

(g) developing the resin glass contained on said substrate in a solvent;

(h) heating said substrate in oxygen to convert said resin glass contained within said deep wide trenches to silicon dioxide;

(i) depositing a layer of silicon dioxide to provide a planar silicon dioxide surface on the exposed surface of said substrate; and

(j) planarize exposed silicon dioxide surface to silicon of substrate.

A planar deep oxide isolation process for providing deep wide silicon dioxide filled trenches in the planar surface of a silicon semiconductor substrate as recited in the preceding paragraph, wherein the following steps are performed in lieu of step i of claim 1, said steps comprising:

(i-1) apply a second thin layer of resin glass; and
(i-2) convert said resin glass to silicon dioxide.
Figure descriptions: cover graphic

  • simplified cross-sectional views of a portion of a semiconductor structure at successive stages of the planar deep oxide isolation process in accordance with the invention.

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National Museum of American History
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