PATENT COVER GRAPHIC


United States Patent 4,224,636
September 23, 1980

Semiconductor Device With Thermally Compensating SiO2-Silicate Glass-Passivation Layer
Toshio Yonezawa
Takashi Ajima
Masato Uchida


Filed June 14, 1978
Image of US PATENT 4,224,636

Abstract of the Disclosure

A semiconductor device comprising a semiconductor substrate and protective films formed thereon. The protective films comprise at least one silicon carbide film which may be pure or may contain particular impurities
Figure descriptions: cover graphic

  • a cross sectional view showing one step of producting a semiconductor device according to one embodiment of this invention.

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