Texas Instruments Collection Military

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Summary comments provided by Texas Instruments' staff.


 
G00337   NMAH Catalog Number 1987.0487.096.01
TI number: G00337
Transistors, Silicon Grown Junction - This transistor, 2N208, was the original oval welded package type designed and built at TI. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No: DA-36-039-SC-54703.

The contract was for Industrial Preparedness Study on Silicon Transistors, usually referred to as a Manufacturing Methods contract, covering the period October, 1954, to April, 1957. The objective was to design three grown junction silicon transistors for use in military equipment and the procedures and tooling for their fabrication and testing. A welded package was required to replace the original TI solder sealed package. Another major improvement resulting from this work was a process for soldering the silicon bar to the header leads. The contract specification was based on the original TI901-2 transistors and engineering estimates of what was needed and might be achieved. This device, designated Type 22-B, was covered by MIL-T-12679A/22B (Sig C) and was registered as RETMA type 2N208. In late 1954, TI super ceded the 901-2 types with 903-5 types. These were designed into the early circuit applications for production; therefore, the 2N208 was built only for contract requirements. With the welded package, TI introduced and registered types 2N117-9 with the same or slightly tighter parameter limits as the 903-5. Military specifications were issued for the 2N117, 8 & 9, and TI became the first qualified supplier of Mil Spec silicon transistors. The three transistors were checked on 1/3/86. Current gain (beta) was still good, and there appeared to be no serious degradation of breakdown voltage. A copy of the contract final report and the 1/3/86 test results are in the Artifact Historical Files.

Related material in collection: G00008, 9, 47, 338, 9. Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.

G00337   NMAH Catalog Number 1987.0487.096.02
TI number: G00337
Transistors, Silicon Grown Junction - This transistor, 2N208, was the original oval welded package type designed and built at TI. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No: DA-36-039-SC-54703.

The contract was for Industrial Preparedness Study on Silicon Transistors, usually referred to as a Manufacturing Methods contract, covering the period October, 1954, to April, 1957. The objective was to design three grown junction silicon transistors for use in military equipment and the procedures and tooling for their fabrication and testing. A welded package was required to replace the original TI solder sealed package. Another major improvement resulting from this work was a process for soldering the silicon bar to the header leads. The contract specification was based on the original TI901-2 transistors and engineering estimates of what was needed and might be achieved. This device, designated Type 22-B, was covered by MIL-T-12679A/22B (Sig C) and was registered as RETMA type 2N208. In late 1954, TI super ceded the 901-2 types with 903-5 types. These were designed into the early circuit applications for production; therefore, the 2N208 was built only for contract requirements. With the welded package, TI introduced and registered types 2N117-9 with the same or slightly tighter parameter limits as the 903-5. Military specifications were issued for the 2N117, 8 & 9, and TI became the first qualified supplier of Mil Spec silicon transistors. The three transistors were checked on 1/3/86. Current gain (beta) was still good, and there appeared to be no serious degradation of breakdown voltage. A copy of the contract final report and the 1/3/86 test results are in the Artifact Historical Files.

Related material in collection: G00008, 9, 47, 338, 9. Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.

G00337   NMAH Catalog Number 1987.0487.096.03
TI number: G00337
Transistors, Silicon Grown Junction - This transistor, 2N208, was the original oval welded package type designed and built at TI. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No: DA-36-039-SC-54703.

The contract was for Industrial Preparedness Study on Silicon Transistors, usually referred to as a Manufacturing Methods contract, covering the period October, 1954, to April, 1957. The objective was to design three grown junction silicon transistors for use in military equipment and the procedures and tooling for their fabrication and testing. A welded package was required to replace the original TI solder sealed package. Another major improvement resulting from this work was a process for soldering the silicon bar to the header leads. The contract specification was based on the original TI901-2 transistors and engineering estimates of what was needed and might be achieved. This device, designated Type 22-B, was covered by MIL-T-12679A/22B (Sig C) and was registered as RETMA type 2N208. In late 1954, TI super ceded the 901-2 types with 903-5 types. These were designed into the early circuit applications for production; therefore, the 2N208 was built only for contract requirements. With the welded package, TI introduced and registered types 2N117-9 with the same or slightly tighter parameter limits as the 903-5. Military specifications were issued for the 2N117, 8 & 9, and TI became the first qualified supplier of Mil Spec silicon transistors. The three transistors were checked on 1/3/86. Current gain (beta) was still good, and there appeared to be no serious degradation of breakdown voltage. A copy of the contract final report and the 1/3/86 test results are in the Artifact Historical Files.

Related material in collection: G00008, 9, 47, 338, 9. Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.

G00403   NMAH Catalog Number 1987.0487.172
TI number: G00403
Missile Dome, Silicon - The nose dome of IR seeking missiles required a lightweight material that efficiently transmitted infrared waves. Silicon was one of the better materials available at the time. This item is an unfinished example of the dome used by Hughes on the Falcon missile.

In the 1959-61 period, the then Semiconductor-Components division developed the capability of growing these domes for the then Apparatus division where they were ground and polished and sold to Hughes. The dome was grown by lowering a rotating graphite mold of the inside of the dome into a molten charge of silicon. The controlled lowering and rotation was continued until the desired thickness of polycrystaline silicon was solidified in the mold. The dome was then pulled from the melt and cooled. The difference in expansion coefficients allowed the dome to separate from the mold. See C00404 for a finished dome.

Related material in collection: PG00073, C00404. Summary comment by: Werner Buyen, Harry Owens, Walt Runyan.

C00404   NMAH Catalog Number 1987.0487.173
TI number: C00404
Missile Dome, Silicon - This dome is a finished version of the G00403 dome. The finishing and marketing was done by the Optics department of the TI Apparatus division, now DS & E Group. The dome dates from late 1960 to early 1961.

Silicon was later replaced for this application by newly developed materials which provided more economical domes.

Related material in collection: PG00073, G00403. Summary comment by: Werner Beyen, Bill Herman, Walt Runyan.

G00150   NMAH Catalog Number 1987.0487.239
TI number: G00150
Microcircuit - Item represents work done for the U.S. Navy Standard Module program. This module, which has been opened for display purpose, was made in late 1971.

The Standard Hardware Module was a Navy Special Projects Office program to promote the use of standard non-repair-able modules utilizing the most practical miniaturization. Outline and mounting dimensions and input and output characteristics were the primary specifications. This module has two sections using deposited resistors and wire bonded diodes, transistors and IC chips.

Summary comment by: Don Hyde, Jim Lacy.

C00170   NMAH Catalog Number 1987.0487.289
TI number: C00170
Photo Available Meter/positioner movement - This is an early movement designed and built by TI in what was the Laboratory and Manufacturing Division of GSI as part of the ASQ-8 airborne magnetic detection system.

This meter movement was the result of a TI proposal to the Navy Bureau of Aeronautics to supply a light weight two-place recording millimeter for use primarily with MAD equipment to replace two Esterline-Agnus recorders then being used. Work began in 1948, and the first working model of the RD-47 was finished in the spring of 1950, and production began in the fall of 1951. The meter movement uses two magnetic fluid clutches in a push-pull arrangement. Gordon Perry, based on recently published National Bureau of Standards literature conceived the idea of using a magnetic fluid clutch as a meter movement. Bo Olson added the idea of using two clutches in a push-pull version. The original patent was issued to Olson and Perry. Later patents covered design improvements. TI built 200 RD-47's. With the Korean War demand, TI contracted with Dalmo Victor for production design refinements and production of the RD 47. During that period, TI made design refinements which resulted in the RD47A, all of which were produced by TI. For additional details, see September, 1953, issue of "texins" in Artifact Historical Files.

Related material in collection: C00182. Summary comment by: Ralph Dosher, Mark Sheperd, Jim Wissemann.

G00054   NMAH Catalog Number 1987.0487.355
TI number: G00054
Timer, Military - Example of engineering application work with micro module components in the 1959-60 period.

Item was part of the original S/B lobby display. This was a possible replacement for a cigar box size equipment. Because of the introduction of integrated circuits, no micro module production ensued.

Related material in collection: G00052, 53. Summary comment by: Charles Earhart.

G00055   NMAH Catalog Number 1987.0487.356
TI number: G00055
Circuit, Thin Film - First TI thin-film circuit. Built in engineering in 1960. Micromesa transistors were used.

Item was part of original S/B Lobby display. The design was intended for high reliability applications. Because of the inherent package reliability of the micromesa, transistors in this package were widely used in thick and thin film circuits for military and space applications through the 1970's. Display lists as contributors Bill Brower and Charles Phipps.

Related material in collection: G00052. Summary comment by: Bill Brower and Charles Phipps.

G00009   NMAH Catalog Number 1987.0487.372
TI number: G00009
Transistor, Silicon Grown Junction - First TI transistor design hermetically sealed with a welded closure. TI type numbers were 2N117,2N118,2N119,USN2N117, USN2N118 & USN2N119. Introduced in 1956.

The US Navy issued the first Military Procurement Specification covering silicon transistors for these type numbers. TI was the first qualified supplier. Production of silicon transistors in this package continued into 1973. (Series shown in 1973 Data Book.) The design work for the welded package was done on a Signal Corps Manufacturing Methods contract.

Related material in collection: G00008, 47, 337. Summary comment by: Charley Earhart, Jim Lacy, Ralph McCullough, Howard Moss.



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