Reference 1987.0487.228 Texas Instruments Collection Reference Material

Silicon grown Junction Transistor 1954
-- page 1 (copy) of Engineering Log of TI's Mort Jones --


as transcribed... :

"On april 14, 1954 bars were cut from a silicon N-P-N grown junction crystal number A-130, grown the previous day. These bars were .040" x .080" x .200" with the junction perpendicular to the long dimension and approximately in the center of the bar as shown in sketch 1.

Silicon grown Junction Transistor 1954 - page 1 (copy) of Engineering Log of TI's Mort Jones


These bars were etched in CP-4 until clean, it was found that if the etching was not prolonged, the emitter end became shiney and the collector end remained dull. The base region was easily visible as the sharp line around the bar. The ends of the bars were lapped with #600 carboundum by holding them in tweezers and using a flat glass plate for lapping. The bars were then washed well to remove any lapping compound, dried, and futher cleaned by rubbing with bibulous paper. "
Morton E. Jones May 6, 1954


National Museum of American History


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