Reference 1987.0487.228 Texas Instruments Collection Reference Material

Silicon grown Junction Transistor 1954
-- page 3 (copy) of Engineering Log of TI's Mort Jones --


as transcribed... :

"...ammonium chloride, and water containing a nickel electrode. The bar was gripped by a copper clip connected to the -terminal of a 6V power supply, the nickel electrode connected to the +terminal and the end of the bar nickel plated for five minutes. The total plating current was 0.5ma. Both ends of the bar were plated in this manner.

Silicon grown Junction Transistor 1954 - page 3 (copy) of Engineering Log of TI's Mort Jones


The plated bar was then soldered into a standard triode header as shown in sketch 3 (p.49). A Zn Cl2-NH4Cl flux was used on the ends of the bar and pure tin was used as solder. The aluminium wire was soldered to the base lead using a special A1 flux and pure tin solder. A CP-4 etch was used to clean the junction. The electrical properties were displayed on a curve tracer and looked comparable to similar germanium transistors. The current amplification factor was measured and found to be 0.900. ..."
Morton E. Jones May 6, 1954


National Museum of American History


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