| Reference 1987.0487.228 | Texas Instruments Collection | Reference Material |
| Silicon grown Junction Transistor 1954 |
| as transcribed... : |
| "...ammonium chloride, and water containing a nickel electrode. The bar was gripped by a copper clip connected to the -terminal of a 6V power supply, the nickel electrode connected to the +terminal and the end of the bar nickel plated for five minutes. The total plating current was 0.5ma. Both ends of the bar were plated in this manner. |
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| The plated bar was then soldered into a standard triode header as shown in sketch 3 (p.49). A Zn Cl2-NH4Cl flux was used on the ends of the bar and pure tin was used as solder. The aluminium wire was soldered to the base lead using a special A1 flux and pure tin solder. A CP-4 etch was used to clean the junction. The electrical properties were displayed on a curve tracer and looked comparable to similar germanium transistors. The current amplification factor was measured and found to be 0.900. ..." |
| Morton E. Jones May 6, 1954 |