Texas Instruments Collection Silicon

Home Search Chip Talk Chip Fun Patents People Pictures Credits Copyright Comments


Summary comments provided by Texas Instruments' staff.


G00269   NMAH Catalog Number 1987.0487.029
 
TI number: G00269
Transistor, Silicon Grown Junction - The display is a block of Lucite containing an open and a sealed example of each of the TI904, 2N117 and 2N332 TI silicon grown junction transistors.

The three transistors represented by these devices differed only in packaging. The solder sealed package was used for the original silicon transistor series in 1954. The oval welded seal package was introduced by TI in 1956 and was the first TI welded package. The rounded welded package, 2N332 series, was introduced in 1957 to use the industry standard JEDEC TO-5 outline which TI was instrumental in developing.

Related material in collection: TI904: G00006,7 2N117: G00008, 9, 47 2N332: G00010, 11, 20, 48. Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00270   NMAH Catalog Number 1987.0487.030
 
TI number: G00270
Transistor, Silicon Grown Junction - The display is a block of Lucite containing an open and a sealed example of the 2N337 silicon grown junction transistor.

The 2N337-8 transistors were introduced in 1957 by TI to provide silicon switching transistors. The higher frequency operation was achieved by a major reduction in the silicon bar cross section compared to that of the 2N332 series.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00271   NMAH Catalog Number 1987.0487.031
 
TI number: G00271
Transistor, Silicon Mesa - The display is a block of Lucite containing an open and a sealed example of the 2N497 silicon mesa medium power transistor.

TI introduced the 2N497 in 1957, and it was the first silicon medium power transistor available to the industry. Using a mesa structure, the device was rated at 200 mA collector current and 4 W dissipation at 25 degrees C.

Related material in collection: G00103. Summary comment by: Howard Moss, Harry Owens.

G00272   NMAH Catalog Number 1987.0487.032
 
TI number: G00272
Transistor, Silicon Mesa Power - The display is a block of Lucite containing an open and a sealed example of the 2N389 silicon mesa power transistor.

TI introduced the 2N389 in 1957, and it was the first silicon high power transistor available to the industry. Using a mesa structure, the device was rated as 2 A collector current and 85 W dissipation at 25 degrees C.

Related material in collection: G00050-1. Summary comment by: Howard Moss, Harry Owens.

G00273   NMAH Catalog Number 1987.0487.033
 
TI number: G00273
Transistor, Silicon Mesa Power - The display is a block of Lucite containing an open and a sealed example of the 2N1047 silicon mesa power transistor.

TI introduced the 2N1047 in early 1958. Using a mesa structure, it was designed to handle requirements between those served by the 2N497 and those needing the 2N389.

Related material in collection: G00028. Summary comment by: Howard Moss, Harry Owens.

G00362   NMAH Catalog Number 1987.0487.091
 
TI number: G00362
Transistor, Silicon Dual - This device is one of the types supplied by TI for use in the Minuteman II and III missile guidance systems. The package contains two chips of the same type connected independently to the external leads.

This type of packaging was developed in early 1963 for the Minuteman II program. The package required much less space per transistor and made use of the same board mounting technique used for integrated circuits. The device is shown in a Mech Pak carrier which was used for testing. Devices meeting specifications were clipped out of the carrier and had the leads formed prior to shipment. This device type was produced at TI into 1978 for the Minuteman II and III missile programs.

Summary comment by: John Gibson, Ed Kamradt, Wayne Richey.

G00363   NMAH Catalog Number 1987.0487.092.01
 
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.02
 
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.03
 
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.04
 
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.05
 
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.06
 
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.07
 
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.08
 
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.09
 
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00336   NMAH Catalog Number 1987.0487.095.01
 
TI number: G00336
Transistors, Silicon Grown Junction - These TI951 transistors were built in April, 1956, (date code 614). They were checked on 1/3/86 and found to have somewhat degraded current gains (beta) but no severe degradation of breakdown voltage.

This series used the original TI grown junction transistor construction in the oval solder sealed package. It was rated a medium power device at 750mW. dissipation at 25 degrees C. vs. 150mW for the small signal. This capability was the result of the mounting clamp heat sink and an alumina filled silastic compound sealed in the package. The silastic required a heat cure prior to the sealing operation. The 1/3/86 readings are in the Artifact Historical Files.

Related material in collection: G00127, 8. Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00336   NMAH Catalog Number 1987.0487.095.02
 
TI number: G00336
Transistors, Silicon Grown Junction - These TI951 transistors were built in April, 1956, (date code 614). They were checked on 1/3/86 and found to have somewhat degraded current gains (beta) but no severe degradation of breakdown voltage.

This series used the original TI grown junction transistor construction in the oval solder sealed package. It was rated a medium power device at 750mW. dissipation at 25 degrees C. vs. 150mW for the small signal. This capability was the result of the mounting clamp heat sink and an alumina filled silastic compound sealed in the package. The silastic required a heat cure prior to the sealing operation. The 1/3/86 readings are in the Artifact Historical Files.

Related material in collection: G00127, 8. Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00336   NMAH Catalog Number 1987.0487.095.03
 
TI number: G00336
Transistors, Silicon Grown Junction - These TI951 transistors were built in April, 1956, (date code 614). They were checked on 1/3/86 and found to have somewhat degraded current gains (beta) but no severe degradation of breakdown voltage.

This series used the original TI grown junction transistor construction in the oval solder sealed package. It was rated a medium power device at 750mW. dissipation at 25 degrees C. vs. 150mW for the small signal. This capability was the result of the mounting clamp heat sink and an alumina filled silastic compound sealed in the package. The silastic required a heat cure prior to the sealing operation. The 1/3/86 readings are in the Artifact Historical Files.

Related material in collection: G00127, 8. Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00337   NMAH Catalog Number 1987.0487.096.01
 
TI number: G00337
Transistors, Silicon Grown Junction - This transistor, 2N208, was the original oval welded package type designed and built at TI. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No: DA-36-039-SC-54703.

The contract was for Industrial Preparedness Study on Silicon Transistors, usually referred to as a Manufacturing Methods contract, covering the period October, 1954, to April, 1957. The objective was to design three grown junction silicon transistors for use in military equipment and the procedures and tooling for their fabrication and testing. A welded package was required to replace the original TI solder sealed package. Another major improvement resulting from this work was a process for soldering the silicon bar to the header leads. The contract specification was based on the original TI901-2 transistors and engineering estimates of what was needed and might be achieved. This device, designated Type 22-B, was covered by MIL-T-12679A/22B (Sig C) and was registered as RETMA type 2N208. In late 1954, TI super ceded the 901-2 types with 903-5 types. These were designed into the early circuit applications for production; therefore, the 2N208 was built only for contract requirements. With the welded package, TI introduced and registered types 2N117-9 with the same or slightly tighter parameter limits as the 903-5. Military specifications were issued for the 2N117, 8 & 9, and TI became the first qualified supplier of Mil Spec silicon transistors. The three transistors were checked on 1/3/86. Current gain (beta) was still good, and there appeared to be no serious degradation of breakdown voltage. A copy of the contract final report and the 1/3/86 test results are in the Artifact Historical Files.

Related material in collection: G00008, 9, 47, 338, 9. Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.

G00337   NMAH Catalog Number 1987.0487.096.02
 
TI number: G00337
Transistors, Silicon Grown Junction - This transistor, 2N208, was the original oval welded package type designed and built at TI. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No: DA-36-039-SC-54703.

The contract was for Industrial Preparedness Study on Silicon Transistors, usually referred to as a Manufacturing Methods contract, covering the period October, 1954, to April, 1957. The objective was to design three grown junction silicon transistors for use in military equipment and the procedures and tooling for their fabrication and testing. A welded package was required to replace the original TI solder sealed package. Another major improvement resulting from this work was a process for soldering the silicon bar to the header leads. The contract specification was based on the original TI901-2 transistors and engineering estimates of what was needed and might be achieved. This device, designated Type 22-B, was covered by MIL-T-12679A/22B (Sig C) and was registered as RETMA type 2N208. In late 1954, TI super ceded the 901-2 types with 903-5 types. These were designed into the early circuit applications for production; therefore, the 2N208 was built only for contract requirements. With the welded package, TI introduced and registered types 2N117-9 with the same or slightly tighter parameter limits as the 903-5. Military specifications were issued for the 2N117, 8 & 9, and TI became the first qualified supplier of Mil Spec silicon transistors. The three transistors were checked on 1/3/86. Current gain (beta) was still good, and there appeared to be no serious degradation of breakdown voltage. A copy of the contract final report and the 1/3/86 test results are in the Artifact Historical Files.

Related material in collection: G00008, 9, 47, 338, 9. Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.

G00337   NMAH Catalog Number 1987.0487.096.03
 
TI number: G00337
Transistors, Silicon Grown Junction - This transistor, 2N208, was the original oval welded package type designed and built at TI. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No: DA-36-039-SC-54703.

The contract was for Industrial Preparedness Study on Silicon Transistors, usually referred to as a Manufacturing Methods contract, covering the period October, 1954, to April, 1957. The objective was to design three grown junction silicon transistors for use in military equipment and the procedures and tooling for their fabrication and testing. A welded package was required to replace the original TI solder sealed package. Another major improvement resulting from this work was a process for soldering the silicon bar to the header leads. The contract specification was based on the original TI901-2 transistors and engineering estimates of what was needed and might be achieved. This device, designated Type 22-B, was covered by MIL-T-12679A/22B (Sig C) and was registered as RETMA type 2N208. In late 1954, TI super ceded the 901-2 types with 903-5 types. These were designed into the early circuit applications for production; therefore, the 2N208 was built only for contract requirements. With the welded package, TI introduced and registered types 2N117-9 with the same or slightly tighter parameter limits as the 903-5. Military specifications were issued for the 2N117, 8 & 9, and TI became the first qualified supplier of Mil Spec silicon transistors. The three transistors were checked on 1/3/86. Current gain (beta) was still good, and there appeared to be no serious degradation of breakdown voltage. A copy of the contract final report and the 1/3/86 test results are in the Artifact Historical Files.

Related material in collection: G00008, 9, 47, 338, 9. Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.

G00338   NMAH Catalog Number 1987.0487.097
 
TI number: G00338
Transistors, Silicon Grown Junction - The 3N28 represents the first production high frequency silicon transistors. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No. DA-36-039-SC-54703. The package and the tetrode configuration are of interest. The tetrode was the only design at the time that permitted satisfactory operation at elevated temperatures.

The contract specification, MIL-T-12679A/23B(Sig C), was for a 4.3 MHz I.F. transistor. To start, state-of-the-art triodes were built. These units were acceptable except for a severe decrease in gain at elevated temperatures. Because of the results with another device (G00339), it was decided to use the tetrode design. Recognizing the need for high frequency devices, TI introduced types 924-7 in early 1956 while proceeding with the contract effort. Power gains were specified at 4.3, 12.5, 30 & 70 MHz respectively. JEDEC type numbers for these specifications in the TO-12 package outline were issued in 1957 as 2N32-5. Specification formats were rapidly evolving with increased industry applications, and this series followed the newer format rather than that of the contract. The 3N28 met its requirements but was supper ceded for production by its equivalent, the 3N32. Subsequent market and yield and experience led to production of only the 3N34 & 5, which were the only types for which registration was completed in 1958. This device is not in the correct package for the 3N28. However, because of the source, the accompanying material and the dipped painting, it likely it was built on the contract line and met specifications. Engineering work on this package was done on that line at the time. For additional information on the package, see G00339. The 3N28 indicated that it likely met specifications when completed. A lab check on 1/3/86 showed it still to have reasonable current gains (beta) and no severe degradation of breakdown voltage. These test readings and contract final report are in the Artifact Historical Files.

Related material in collection: G00008, 9, 47, 337, 9. Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.

G00339   NMAH Catalog Number 1987.0487.098
 
TI number: G00339
Transistors, Silicon Grown Junction - These 3N24 transistors represent production of the first silicon high frequency transistors. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No: DA-36-039-SC-54703. The package and the tetrode configuration are of interest.

The contract specification, MIL-T-12679A/24B(Sig C), was for a 12.5 MHz I.F. transistor. After evaluating state-of-the-art triodes, it was decided to use the tetrode design. The 3N24 satisfactorily met the contract requirements; however, it was super ceded by the 3N33 for production. (See G00338 for details.) These units were surplus from the contract pilot manufacturing line. The symbolization indicates they met specifications at the time. The "980715" is the TI Federal Stock Number, 980, and the Manufacturing Date Code, 715, which is for the 15th week of 1957. The three devices were given a limited lab check on 1/3/86. Current gain (beta) was reasonable, and there appeared to be no serious degradation of breakdown voltage. These test results and a copy of the contract Final Report are in the Artifact Historical Files. The package size designation was listed as JETEC Group 30. The lead pitch circle diameter of .200" fitted the industry preference for the .100" printed board grid. Also, it was more convenient for use with the tetrode structure. Although it was used for this project, TI recognized several shortcomings. The limited glass thickness between the leads and the rim offered potential leaks from the stress of welding and lead handling. The position of the weld flange provided chance for flash to enter package and/or the eyelet rim to separate from the glass, breaking the hermetic seal. Consequently, TI initiated a modification which slightly increased the outside diameter and allowed the flange to be at the bottom. This became the industry standard JEDEC TO-5 for triodes and TO-12 for tetrodes.

Related material in collection: G00008, 9, 47, 337, 8. Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.

G00332   NMAH Catalog Number 1987.0487.112
 
TI number: G00332
Transistor, Silicon Dual - This was the first dual transistor chips packaged in the 1/4in x 1/4in metal flatpack at TI. The manufacturing date was January, 27 1969. Some of the final fabrication steps were performed by the product engineer, Fritz Whittington.

This work was done on the Lockheed M & S controlled line for the Poseidon Program. This line was operated under rigidly controlled conditions for high reliability. TI had been manufacturing dual transistor since 1963 in the 1/8" x 1/8" metal flatpack for the Minuteman Program. The 1/4" x 1/4" package was chosen for the Poseidon because it was easier to handle and space was available.

Summary comment by: Bill Brower, Fritz Whittington.

G00265   NMAH Catalog Number 1987.0487.116.01
 
TI number: G00265
Photo Available Wafers, Silicon - These slices are from the first lot 150 mm. silicon slices produced at TI, June, 1983. The crystals were grown and processed to production slices at the Sherman plant.

Summary comment by: Jim Rinehart.

G00265   NMAH Catalog Number 1987.0487.116.02
 
TI number: G00265
Wafers, Silicon - These slices are from the first lot 150 mm. silicon slices produced at TI, June, 1983. The crystals were grown and processed to production slices at the Sherman plant.

Summary comment by: Jim Rinehart.

G00265   NMAH Catalog Number 1987.0487.116.03
 
TI number: G00265
Wafers, Silicon - These slices are from the first lot 150 mm. silicon slices produced at TI, June, 1983. The crystals were grown and processed to production slices at the Sherman plant.

Summary comment by: Jim Rinehart.

G00407   NMAH Catalog Number 1987.0487.133
 
TI number: G00407
Transistor, Silicon Planar - This item is an example of the first significant planar transistor made at TI. The work was done in 1961.

The planar process was invented at Fairchild Semiconductor in 1959. This process capability, which was developed at TI in early 1961, solved surface generated problems and resulted in major improvement in yield and reliability. TI produced transistors for the Polaris and Minuteman I programs with this process, which became standard for all small signal and most power transistors. Included is a drawing illustrating the chip construction. The display was part of the original South Building lobby exhibit. The transistor shown is a 2N1893, a JEDEC registered type number, which was one of the first TI planar types. The chip is representative of the type used for Polaris and Minuteman I. The transistor shown has a date code of 009 (ninth week of 1970). At the time of this documentation, a search is being made for a transistor manufactured nearer to the date of the introduction of the process.

Summary comment by: Mort Jones, Jim Naygaard.

G00414   NMAH Catalog Number 1987.0487.158
 
TI number: G00414
Transistor, Silicon Power, Special - This transistor is representative of the radiation tolerant power transistors developed by TI. The type designation indicates a "special device", the TI term of a variation of a standard device with specifications for one customer.

This transistor is date coded 6916. The leads indicate that it was probably used for some engineering evaluation in TI. The ceramic insert in the cap is typical of radiation tolerant transistors. The device design was done in the mid 1960's. The customer was Bendix, Kansas City, indicating use in a nuclear weapon application. This type was produced until about 1978. Transistors with several variations of the basic chip design are still being produced.

Related material in collection: G00415. Summary comment by: Dave Jasper, Fan Shao.

G00415   NMAH Catalog Number 1987.0487.159
 
TI number: G00415
Transistor, Silicon Power - The TIXP40 was an experimental radiation tolerant silicon power transistor developed in the mid 1960's. The "TIXP" designates it as an experimental design for a specific customer application. The specifications were registered with JEDEC in 1970 and designated 2N5940.

This transistor has a 6916 date code and apparently was soldered into a circuit for evaluation. The 2N5940 is still being produced by TI.

Related material in collection: G00415. Summary comment by: Dave Jasper, Fan Shao.

G00427   NMAH Catalog Number 1987.0487.165
 
TI number: G00427
Wafer - This plaque contains a probed slice from the first lot of 4in silicon processed through Sherman BP1. The lot was probed on June 28, 1976. The device type is SN7489, a 64 bit Random Access Read/Write Memory.

Summary comment by: Burrell Ketcham.

G00401   NMAH Catalog Number 1987.0487.171
 
TI number: G00401
Dendrites, Silicon - This item has no technological significance other than to illustrate the random growth of silicon dendrites and the imagination of an unknown technician.

After completing the growth of a crystal in the Semiconductor Research and Development Lab (SRDL), the technician controlled the pullout to allow the growth of dendrites to use the melt remaining in the crucible.

G00403   NMAH Catalog Number 1987.0487.172
 
TI number: G00403
Missile Dome, Silicon - The nose dome of IR seeking missiles required a lightweight material that efficiently transmitted infrared waves. Silicon was one of the better materials available at the time. This item is an unfinished example of the dome used by Hughes on the Falcon missile.

In the 1959-61 period, the then Semiconductor-Components division developed the capability of growing these domes for the then Apparatus division where they were ground and polished and sold to Hughes. The dome was grown by lowering a rotating graphite mold of the inside of the dome into a molten charge of silicon. The controlled lowering and rotation was continued until the desired thickness of polycrystaline silicon was solidified in the mold. The dome was then pulled from the melt and cooled. The difference in expansion coefficients allowed the dome to separate from the mold. See C00404 for a finished dome.

Related material in collection: PG00073, C00404. Summary comment by: Werner Buyen, Harry Owens, Walt Runyan.

C00404   NMAH Catalog Number 1987.0487.173
 
TI number: C00404
Missile Dome, Silicon - This dome is a finished version of the G00403 dome. The finishing and marketing was done by the Optics department of the TI Apparatus division, now DS & E Group. The dome dates from late 1960 to early 1961.

Silicon was later replaced for this application by newly developed materials which provided more economical domes.

Related material in collection: PG00073, G00403. Summary comment by: Werner Beyen, Bill Herman, Walt Runyan.

G00351   NMAH Catalog Number 1987.0487.177.01
 
TI number: G00351
Rectifier Module, Silicon High Voltage - This module from the 1958-60 period consisted of a string of TI diodes of the 1N645 series (probably 1N649's) with current balancing resistors connected to achieve a breakdown voltage of 5,000 V.

Modules of this sort were a means of achieving voltage and current levels greater than possible in a single device with the then state-of-the-art.

Related material in collection: G00060. Summary comment by: Elmer Elkins, Bob Wallace.

G00351   NMAH Catalog Number 1987.0487.177.02
 
TI number: G00351
Rectifier Module, Silicon High Voltage - This module from the 1958-60 period consisted of a string of TI diodes of the 1N645 series (probably 1N649's) with current balancing resistors connected to achieve a breakdown voltage of 5,000 V.

Modules of this sort were a means of achieving voltage and current levels greater than possible in a single device with the then state-of-the-art.

Related material in collection: G00060. Summary comment by: Elmer Elkins, Bob Wallace.

G00351   NMAH Catalog Number 1987.0487.177.03
 
TI number: G00351
Rectifier Module, Silicon High Voltage - This module from the 1958-60 period consisted of a string of TI diodes of the 1N645 series (probably 1N649's) with current balancing resistors connected to achieve a breakdown voltage of 5,000 V.

Modules of this sort were a means of achieving voltage and current levels greater than possible in a single device with the then state-of-the-art.

Related material in collection: G00060. Summary comment by: Elmer Elkins, Bob Wallace.

G00117   NMAH Catalog Number 1987.0487.181
 
TI number: G00117
Transistor Display, Silicon Small Signal - These kits were used in the 1960's and early 1970's by Product Marketing and Field Sales Engineers in customer discussions.

The purpose of this sales tool was to show readily the wide variety of packages available and the device geometries used. The kit contains samples of various transistors, capped and uncapped, in various packages. Also is shown a picture of transistor types with the corresponding package and geometry designations.

Summary comment by: John Gibson, Jim Owens, Bob Zlotky.

G00256   NMAH Catalog Number 1987.0487.210
 
TI number: G00256
Diode, Double Plug Silicon - The item is a production example of the TI glass double-plug silicon diode.

This is a 1N251 (date code 7533). Instead of the TI trademark, it is marked only with GOJ, the military designator for TI, because of space. This design was in production from 1962 until the second quarter of 1982 when the diode operation transfer to Unitrode was completed. The production volume was approximately 50 million units per month in 1982.

Related material in collection: G00195. Summary comment by: Obie Draper.

G00167   NMAH Catalog Number 1987.0487.212.01
 
TI number: G00167
Transistors, silicon power - These items are examples of silicon power transistors in the TO-3 package. This package has been used in production at TI with a wide variety of silicon and germanium chips.

The devices did not have the caps mounted. For the various silicon chips used, normally the rated power dissipation is 85W at 100 degrees C case; rated collector current is up to 30A continuous and the breakdown voltage about 80V. The header and cap are nickel plated copper sealed by a cold weld.

Related material in collection: G00168 Summary comment by: Ed Allison; Jim Lineback.

G00167   NMAH Catalog Number 1987.0487.212.02
 
TI number: G00167
Transistors, silicon power - These items are examples of silicon power transistors in the TO-3 package. This package has been used in production at TI with a wide variety of silicon and germanium chips.

The devices did not have the caps mounted. For the various silicon chips used, normally the rated power dissipation is 85W at 100 degrees C case; rated collector current is up to 30A continuous and the breakdown voltage about 80V. The header and cap are nickel plated copper sealed by a cold weld.

Related material in collection: G00168 Summary comment by: Ed Allison; Jim Lineback.

G00168   NMAH Catalog Number 1987.0487.213.01
 
TI number: G00168
Transistors, silicon power - These items are examples of silicon power transistors in the TO-3 package. This package has been used in production at TI for a wide variety of silicon and germanium chips since the early 1960's.

These are flange mounted packages with the caps welded to the header. The header and cap are nickel plated copper sealed by a cold weld. The leads are glass-to-metal feed-throughs brazed in place. See G00167 for typical device specifications and other information.

Related material in collection: G00167 Summary comment by: Ed Allison; Jim Lineback.

G00168   NMAH Catalog Number 1987.0487.213.02
 
TI number: G00168
Transistors, silicon power - These items are examples of silicon power transistors in the TO-3 package. This package has been used in production at TI for a wide variety of silicon and germanium chips since the early 1960's.

These are flange mounted packages with the caps welded to the header. The header and cap are nickel plated copper sealed by a cold weld. The leads are glass-to-metal feed-throughs brazed in place. See G00167 for typical device specifications and other information.

Related material in collection: G00167 Summary comment by: Ed Allison; Jim Lineback.

G00161   NMAH Catalog Number 1987.0487.222.01
 
TI number: G00161
Transistors, silicon power - These items did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is 30W at 100 degrees C case; rated collector current is up to 10A continuous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized beryllium oxide wafer.

Related material in collection: G00162 Summary comment by: Ed Allison, Jim Lineback.

G00161   NMAH Catalog Number 1987.0487.222.02
 
TI number: G00161
Transistors, silicon power - These items did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is 30W at 100 degrees C case; rated collector current is up to 10A continuous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized beryllium oxide wafer.

Related material in collection: G00162 Summary comment by: Ed Allison, Jim Lineback.

G00161   NMAH Catalog Number 1987.0487.222.03
 
TI number: G00161
Transistors, silicon power - These items did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is 30W at 100 degrees C case; rated collector current is up to 10A continuous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized beryllium oxide wafer.

Related material in collection: G00162 Summary comment by: Ed Allison, Jim Lineback.

G00162   NMAH Catalog Number 1987.0487.223.01
 
TI number: G00162
Transistors, silicon power - These items are examples of silicon power transistors in the TO-59 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps welded to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00161 for typical device specifications for the various silicon chips used.

Related material in collection: G00161. Summary comment by: Ed Allison, Jim Lineback.

G00162   NMAH Catalog Number 1987.0487.223.02
 
TI number: G00162
Transistors, silicon power - These items are examples of silicon power transistors in the TO-59 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps welded to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00161 for typical device specifications for the various silicon chips used.

Related material in collection: G00161. Summary comment by: Ed Allison, Jim Lineback.

G00163   NMAH Catalog Number 1987.0487.224
 
TI number: G00163
Transistors, silicon power - These items are examples of silicon power transistors in the TO-61 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipaion is 67W at 100 degrees C case; rated collector current is up to 20A continous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00164. Summary comment by: Ed Allison, Jim Lineback.

G00163   NMAH Catalog Number 1987.0487.224.01
 
TI number: G00163
Transistors, silicon power - These items are examples of silicon power transistors in the TO-61 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipaion is 67W at 100 degrees C case; rated collector current is up to 20A continous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00164. Summary comment by: Ed Allison, Jim Lineback.

G00163   NMAH Catalog Number 1987.0487.224.02
 
TI number: G00163
Transistors, silicon power - These items are examples of silicon power transistors in the TO-61 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipaion is 67W at 100 degrees C case; rated collector current is up to 20A continous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00164. Summary comment by: Ed Allison, Jim Lineback.

G00164   NMAH Catalog Number 1987.0487.225.01
 
TI number: G00164
Transistors, silicon power - These items are examples of silicon power transistors in the TO-61 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps welded to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00163 for typical specifications for the various silicon chips used.

Related material in collection: G00163. Summary comment by: Ed Allison, Jim Lineback.

G00164   NMAH Catalog Number 1987.0487.225.02
 
TI number: G00164
Transistors, silicon power - These items are examples of silicon power transistors in the TO-61 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps welded to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00163 for typical specifications for the various silicon chips used.

Related material in collection: G00163. Summary comment by: Ed Allison, Jim Lineback.

G00165   NMAH Catalog Number 1987.0487.226.01
 
TI number: G00165
Transistors, silicon power - These items are examples of silicon power transistors in the TO-63 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is over 100 degrees C case; rated collector current is up to 30A continuous and breakdown voltage is 100-120V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00166. Summary comment by: Ed Allison, Jim Lineback.

G00165   NMAH Catalog Number 1987.0487.226.02
 
TI number: G00165
Transistors, silicon power - These items are examples of silicon power transistors in the TO-63 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is over 100 degrees C case; rated collector current is up to 30A continuous and breakdown voltage is 100-120V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00166. Summary comment by: Ed Allison, Jim Lineback.

G00165   NMAH Catalog Number 1987.0487.226.03
 
TI number: G00165
Transistors, silicon power - These items are examples of silicon power transistors in the TO-63 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is over 100 degrees C case; rated collector current is up to 30A continuous and breakdown voltage is 100-120V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00166. Summary comment by: Ed Allison, Jim Lineback.

G00166   NMAH Catalog Number 1987.0487.227.01
 
TI number: G00166
Transistors, silicon power - These items are examples of silicon power transistors in the TO-63 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps mounted to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00165 for typical device specifications for the various silicon chips used.

Related material in collection: G00165. Summary comment by: Ed Allison, Jim Lineback.

G00166   NMAH Catalog Number 1987.0487.227.02
 
TI number: G00166
Transistors, silicon power - These items are examples of silicon power transistors in the TO-63 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps mounted to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00165 for typical device specifications for the various silicon chips used.

Related material in collection: G00165. Summary comment by: Ed Allison, Jim Lineback.

G00124   NMAH Catalog Number 1987.0487.228
 
TI number: G00124
Transistor, Silicon Grown Junction - This device, built April 14, 1954, was the first silicon transistor built by TI which exhibited useful transistor action. This development led to the announcement by TI of the first commercially available silicon transistor in May, 1954.

This item was part of the original S/B Lobby display and the 50th Anniversary exhibit. During a conversation with Jim Lacy, Mort Jones provided the following background information. This transistor was fabricated on April 14, 1954. Jones thinks it was first saved by Ed Jackson. It was put in a display and presented by Pat Haggerty to Jones of his tenth anniversary as a TI'er in August, 1963. This silicon grown junction transistor was the result of a program started in 1953 under Gordon Teal. On the development team were Willis Adcock, Ed Jackson, Mort Jones and Jay Thornhill. On May 10, 1954, a lengthy roster of speakers at the IRE National Conference on Airborne Electronics in Dayton, Ohio, predicted that silicon might be the answer in four or five years to the heat problem then limiting the use of germanium transistors. Gordon Teal, the final speaker on the program, reviewed the work done at TI and closed with the announcement that TI had silicon transistors for immediate delivery. To demonstrate their capability, he played a phonograph using TI transistors operating in oil at 150 degrees C. This startling disclosure echoed throughout the industry, and TI was on its way to becoming the leading semiconductor manufacturer. QRA checked this unit on 5/3/85. It had an open base lead. Collector to emitter breakdown (100 uA) was 4.5V. See Artifact Historical File for X-ray photos, a copy of Jones' notebook pages and talks by Adcock and Teal at the 25th anniversary observance.

Related material in collection: G00006,7. Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.

G00125   NMAH Catalog Number 1987.0487.229.01
 
TI number: G00125
Transistor, Silicon Grown Junction - This item is an example of the original TI silicon grown junction which was introduced in May, 1954.

Item was part of the original S/B Lobby display and was used in the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 126. Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.

G00125   NMAH Catalog Number 1987.0487.229.02
 
TI number: G00125
Transistor, silicon grown junction - This item is an example of the original TI silicon grown junction which was introduced in May, 1954.

Item was part of the original S/B Lobby display and was used in the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 126. Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.

G00126   NMAH Catalog Number 1987.0487.230.01
 
TI number: G00126
Transistor, Silicon Grown Junction - This item is an example of the original TI silicon grown junction transistor series which was introduced in May, 1954.

Item was part of the original S/B display and the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 125. Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.

G00126   NMAH Catalog Number 1987.0487.230.02
 
TI number: G00126
Transistor, silicon grown junction - This item is an example of the original TI silicon grown junction transistor series which was introduced in May, 1954.

Item was part of the original S/B display and the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 125. Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.

G00126   NMAH Catalog Number 1987.0487.230.03
 
TI number: G00126
Transistor, silicon grown junction - This item is an example of the original TI silicon grown junction transistor series which was introduced in May, 1954.

Item was part of the original S/B display and the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 125. Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.

G00126   NMAH Catalog Number 1987.0487.230.04
 
TI number: G00126
Transistor, silicon grown junction - This item is an example of the original TI silicon grown junction transistor series which was introduced in May, 1954.

Item was part of the original S/B display and the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 125. Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.

G00127   NMAH Catalog Number 1987.0487.231
 
TI number: G00127
Transistor, Silicon Grown Junction - Type X-15 was a May 1954, engineering experimental device designed to increase the rate dissipation of the silicon grown junction transistor from .150 W to .750 W.

Item was part of the original S/B Lobby display and was used in the 50th Anniversary exhibit. The original x-15 was filled with DC200 silicone oil and mounted in a heat sink strap which could be screw mounted. The oil was changed to a Dow Corning alumina impregnated silastic for production. The silastic required a heat cure prior to soldering the can in place. The device was introduced as the TI951 series in the latter part of 1954.

Related material in collection: G00128, 336. Summary comment by: Norman Ince, Jim Lacy.

G00128   NMAH Catalog Number 1987.0487.232.01
 
TI number: G00128
Transistor, silicon grown junction - The TI951-3 were the first medium power silicon grown junction transistors and were introduced in late 1954. The heat sink shown was supplied with each transistor. The dissipation rating was .750W at 25 degrees C.

Item was part of the original S/B Lobby display and was used in the 50th Anniversary exhibit. This series was constructed the same as the TI 901 series but was filled with a Dow Corning alumina filled silastic which required a heat curve prior to sealing.

Related material in collection: G00127, 336. Summary comment by: Norman Ince, Jim Lacy.

G00128   NMAH Catalog Number 1987.0487.232.02
 
TI number: G00128
Transistor, silicon grown junction - The TI951-3 were the first medium power silicon grown junction transistors and were introduced in late 1954. The heat sink shown was supplied with each transistor. The dissipation rating was .750W at 25 degrees C.

Item was part of the original S/B Lobby display and was used in the 50th Anniversary exhibit. This series was constructed the same as the TI 901 series but was filled with a Dow Corning alumina filled silastic which required a heat curve prior to sealing.

Related material in collection: G00127, 336. Summary comment by: Norman Ince, Jim Lacy.

G00257   NMAH Catalog Number 1987.0487.270
 
TI number: G00257
Transistor, Silicon Planar - This transistor is a TI production example of the 2N698 family of versatile silicon planar transistors designed for amplifier, switching and oscillator applications.

From the date code and the other items in the collection with which this was received, the device was made in early 1974. The original family types were introduced in 1963, and the series continued in production into the early 1980's.

Summary comment by: Hoyt Cowling, Obie Draper.

G00259   NMAH Catalog Number 1987.0487.272
 
TI number: G00259
Transistor, Silicon Industrial Power - This transistor is an example of a line of silicon power transistors designed and built for industrial applications. The "A" in front of the date code indicates Dallas production.

G00260   NMAH Catalog Number 1987.0487.273
 
TI number: G00260
Transistor, Silicon Power - This silicon power transistor is in a steel TO-3 package of the type used in industrial and automotive applications. The "A" in front of the date code indicates Dallas production.

Summary comment by: Wade Feemster, Dave Jasper.

G00101   NMAH Catalog Number 1987.0487.280
 
TI number: G00101
Transistor, Silicon Power - The item is one of the first silicon power transistors for MERA. It had a 2 W output at 2.25 GHz and a gain exceeding 3dB. It was built in 1965-6.

This item was part of the original S/B Lobby display. One of these transistors was in each of the MERA modules in chip form. The coaxial package with this chip was used for device testing and evaluation only. For additional information, see "Monolithic Microwave Integrated Circuits: an Historical Perspective", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, Vol. MTT-32, No. 9, September, 1984, in the Artifact Historical Files.

Related material in collection: G00100, 102, 180, 310, 311. Summary comment by: Tom Hyltin, Brad LaGrange, Frank Opp, Roger Webster.

G00105   NMAH Catalog Number 1987.0487.282
 
TI number: G00105
Sculpture, Silicon - First known work of art (1972) shaped from single crystal silicon.

This item was part of the original S/B Lobby display. A + T was made to a design by Harvard trained Venezuelan sculptor Alberto Collie and produced at TI. A decade earlier TI'ers had worked with him to develop electromagnetic levitators for innovative sculptures called spacial absolutes. This piece combines a dual sophistication of art and technology in an unlikely material. It is reported that about 200 of these pieces were made and signed by the sculptor.

Summary comment by: Fred Bucy, Jimme Sherer.

G00352   NMAH Catalog Number 1987.0487.288
 
TI number: G00352
Rectifier Module, Silicon High Voltage - This module was designed under a U.S. Navy contract to be a replacement for an 866 high voltage mercury rectifier being used in shipboard fire control equipment for large guns. It was molded on a standard vacuum tube base. The work was done in 1956-7.

The specification were 4 kV and 1 A ac. The contract requirements were met, but no production developed.

Summary comment by: Bob Wallace.

G00301   NMAH Catalog Number 1987.0487.301
 
TI number: G00301
Crystal, Silicon - This is an experimental crystal grown in about 1957. It was part of the same projects described in G00299.

This silicon crystal was grown on a carbon disk. To get a reasonably uniform cooling rate for the silicon as it formed on the disk., radial slots were cut in the disk. The size and shape of the slots caused the spoke effect in this crystal. Subsequent modifications resulted in solid disks of silicon. The top (seed side) of this crystal was removed to form the flat side with the padded cover.

Related material in collection: G00299, 300. Summary comment by: Harry Owens, Walt Runyan.

G00302   NMAH Catalog Number 1987.0487.302
 
TI number: G00302
Crystal, Silicon - This sample represents the production crystal growing capabilities of the early 1960's. This type was used for all silicon semiconductor devices except grown junction transistors

This crystal originally was probably 6"-8" long. Slices would be used from the portion of the crystal meeting a required resistivity range.

Summary comment by: Olin Cecil, Walt Runyan.

G00050   NMAH Catalog Number 1987.0487.341
 
TI number: G00050
Transistor, Silicon Diffused Mesa Power - Example of the first diffused mesa silicon transistor produced by TI. Introduced in early 1957.

Item was part of the original S/B Lobby display. This was the best silicon power transistor available for some time and was designed into much military equipment. Collector current rating was 2A. The initial price was $86 in 1-99 quantities. A JAN specification was issued in 1962, and TI immediately became a qualified supplier. Because of its wide use in military equipment, even prior to the JAN specification, it remained in production until(UNKNOWN DATE), even after an improved planar transistor was available. Because of different processes full interchangeability could not be maintained. See display description for additional information.

Related material in collection: G00051. Summary comment by: Boyd Cornelison, Howard Moss, Elmer Wolff.

G00051   NMAH Catalog Number 1987.0487.342
 
TI number: G00051
Transistor, Silicon Diffused Mesa Power - Example of first silicon diffused mesa transistor produced at TI.

Item was part of original S/B Lobby display. See G00050 for additional information.

Related material in collection: G00050 Summary comment by: Boyd Cornelison, Howard Moss, Elmer Wolff.

G00005   NMAH Catalog Number 1987.0487.349
 
TI number: G00005
Crystal, Silicon - This item is half of an experimental silicon grown junction transistor crystal grown by Walt Runyan in about 1956.

After being grown in a helium atmosphere, a crystal was cut in half and a resistivity profile measured. If acceptable, the crystal was cut into transistor bars with the junction approximately in the middle. The characteristics of the transistors were established when the crystal was grown. The crystal design and growing procedure was established in the spring of 1954, resulting in the first available production silicon transistor.

Related material in collection: G00020. Summary comment by: Willis Adcock, Jim Lacy, Howard Moss, Walt Runyan.

G00049   NMAH Catalog Number 1987.0487.351
 
TI number: G00049
Transistor, Silicon Grown Junction - Example of 1957 period engineering study. A shorter silicon bar had the collector and emitter ends mounted on kovar tabs which were welded to the header posts.

Item was part of the original S/B Lobby display. Advantages were lower saturation resistance and better heat dissipation. Method was not used for production because the advantages for normal use did not justify the higher product-costs.

Summary comment by: Howard Moss, Harry Owens.

G00006   NMAH Catalog Number 1987.0487.369
 
TI number: G00006
Transistor, Silicon Grown Junction - Typical of original TI silicon grown junction transistor. The first commercially available silicon transistor was announced by TI in May, 1954. The first type numbers were TI901 and TI902.

Can was soldered to header for hermetic seal. See G00007 for additional information.

Related material in collection: G00007, 124. Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.

G00007   NMAH Catalog Number 1987.0487.370
 
TI number: G00007
Transistor, Silicon Grown Junction - Typical of original TI silicon grown junction transistor. The first commercially available silicon transistor was announced by TI in May, 1954. The first type numbers were TI901 & TI902.

Can is soldered to header for hermetic seal. Production of this design continued until 1962. Gordon Bellah found that TI requalified a design change for the USN 2N117 series with a narrow weld flange in March, 1961. Memory, verified by check with Howard Moss, was that this change permitted ending production of the soldered can by late 1961 or early 1962 without causing a customer assembly problem.

Related material in collection: G00006, 124. Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.

G00008   NMAH Catalog Number 1987.0487.371
 
TI number: G00008
Transistor, Silicon Grown Junction - Typical of first TI transistor hermetically sealed with a welded closure. The flange on the base is for the weld.

See G00009 for details.

Related material in collection: G00009, 47, 337. Summary comment by: Charley Earhart, Jim Lacy, Howard Moss, Harry Owens.

G00009   NMAH Catalog Number 1987.0487.372
 
TI number: G00009
Transistor, Silicon Grown Junction - First TI transistor design hermetically sealed with a welded closure. TI type numbers were 2N117,2N118,2N119,USN2N117, USN2N118 & USN2N119. Introduced in 1956.

The US Navy issued the first Military Procurement Specification covering silicon transistors for these type numbers. TI was the first qualified supplier. Production of silicon transistors in this package continued into 1973. (Series shown in 1973 Data Book.) The design work for the welded package was done on a Signal Corps Manufacturing Methods contract.

Related material in collection: G00008, 47, 337. Summary comment by: Charley Earhart, Jim Lacy, Ralph McCullough, Howard Moss.

G00010   NMAH Catalog Number 1987.0487.373
 
TI number: G00010
Transistor, Silicon Grown Junction - Typical of first TI round weld sealed transistor package. This package was designed in 1957 and was involved in this establishment of the industry standard JEDEC TO-5 package outline. Type numbers were 2N332-2N336 and JAN2N332,3 & 5.

Production of silicon grown junction transistors in this package continued until late 1977 or early 1978. The final inventory was sold to a distributor in August, 1978.

Related material in collection: G00011, 20, 48, 339. Summary comment by: Hoyt Cowling, Jim Lacy, Howard Moss, Harry Owens.

G00011   NMAH Catalog Number 1987.0487.374
 
TI number: G00011
Transistor, Silicon Grown Junction - Typical of first TI transistor in round welded package. Header design met industry preferred 0.100 inch hole spacing on printed circuit boards.

See G00010.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00032   NMAH Catalog Number 1987.0487.379.01
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.02
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.03
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.04
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.05
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.06
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.07
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.08
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.09
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.10
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.11
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.12
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.13
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.14
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.15
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.16
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.17
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.18
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00032   NMAH Catalog Number 1987.0487.379.19
 
TI number: G00032
Transistor Bars, Silicon Grown Junction - Represents a Cavitron tooling experiment done on the Signal Corps Contract line in the 1955-6 period. Deemed less desirable than square bars for production.

Summary comment by: Bill Brower, Harry Owens, Curtis Randolph.

G00033   NMAH Catalog Number 1987.0487.380.01
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.02
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.03
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.04
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.05
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.06
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.07
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.08
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.09
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.10
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.11
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.12
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00033   NMAH Catalog Number 1987.0487.380.13
 
TI number: G00033
Transistor Bars, Silicon Grown Junction - Representative of the standard bars used in production.

These bars were from the Signal Corps Contract lines of 1955-56 and are typical of those used for production of all silicon small signal and the medium power grown junction transistors.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00040   NMAH Catalog Number 1987.0487.390
 
TI number: G00040
Transistor, Silicon, Grown Junction Power - First silicon power transistor. Used only for experimental and development work within TI. Work was done in 1955.

Used 1/8" x 1/8" x 1/4" bar with collector end soldered to copper header. Device was developed in conjunction with the TI Apparatus Division and used in an experimental replacement servo-amplifier unit for Minneapolis-Honeywell. Feasibility was proven, but no production design was made. Item was part of original S/B Lobby display. This device was the basis of the design for the TI970 (G00045 and 46).

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00046   NMAH Catalog Number 1987.0487.391
 
TI number: G00046
Transistor, Silicon Grown Junction Power - Represents first silicon power transistor commercially available. Introduced by TI in late 1955.

The TI 970 was given the JEDEC registration number of 2N122 and was produced into the mid 1960's. It was the same as the TI X-36 except for the package. The base was copper for heat dissipation. The rating was 120 V, 140 mA and 8.5 W at 25 degrees C. One of the units is mounted on a display and was part of the original South Building lobby display. At the time of introduction, the product life expectancy of the TI970 did not justify tooling for stamping the base. This assumption proved to be wrong, and tooling had to made to handle the volume requirements. For interchangeability, the appearance and dimensions of the package were maintained.

Related material in collection: G00040, 45, 402. Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00046   NMAH Catalog Number 1987.0487.392
 
TI number: G00046
Transistor, Silicon Grown Junction Power - Represents first silicon power transistor commercially available. Introduced by TI in late 1955.

The TI 970 was given the JEDEC registration number of 2N122 and was produced into the mid 1960's. It was the same as the TI X-36 except for the package. The base was copper for heat dissipation. The rating was 120 V, 140 mA and 8.5 W at 25 degrees C. One of the units is mounted on a display and was part of the original South Building lobby display. At the time of introduction, the product life expectancy of the TI970 did not justify tooling for stamping the base. This assumption proved to be wrong, and tooling had to made to handle the volume requirements. For interchangeability, the appearance and dimensions of the package were maintained.

Related material in collection: G00040, 45, 402. Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00045   NMAH Catalog Number 1987.0487.394
 
TI number: G00045
Transistor, Silicon Grown Junction Power - First silicon power transistor. Used only for experimental work within TI. Work was done in 1955.

See G00040 for description.

Related material in collection: G00040, 46, 402. Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00047   NMAH Catalog Number 1987.0487.395.01
 
TI number: G00047
Transistor, Silicon Grown Junction - First TI production transistor design hermetically sealed with a welded closure. TI type numbers were 2N217 series. introduced in 1956.

See G00009 and G00337 for additional information. Item was part of the original S/B Lobby display.

Related material in collection: G00008, 9, 337. Summary comment by: See G00009 and G00337 for additional information. Item was part of the original S/B Lobby display. Reference SOURCE: Charley Earhart, Howard Moss, Harry Owens.

G00047   NMAH Catalog Number 1987.0487.395.02
 
TI number: G00047
Transistor, Silicon Grown Junction - First TI production transistor design hermetically sealed with a welded closure. TI type numbers were 2N217 series. introduced in 1956.

See G00009 and G00337 for additional information. Item was part of the original S/B Lobby display.

Related material in collection: G00008, 9, 337. Summary comment by: See G00009 and G00337 for additional information. Item was part of the original S/B Lobby display. Reference SOURCE: Charley Earhart, Howard Moss, Harry Owens.

G00048   NMAH Catalog Number 1987.0487.396.01
 
TI number: G00048
Transistor, Silicon Grown Junction - This device is an example of the first TI production round weld sealed transistor package introduced in 1957.

Item was part of original S/B Lobby display. See G00010, 11, and 339 for additional information on the package.

Related material in collection: G00010, 11, 20, 339. Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00048   NMAH Catalog Number 1987.0487.396.02
 
TI number: G00048
Transistor, Silicon Grown Junction - This device is an example of the first TI production round weld sealed transistor package introduced in 1957.

Item was part of original S/B Lobby display. See G00010, 11, and 339 for additional information on the package.

Related material in collection: G00010, 11, 20, 339. Summary comment by: Jim Lacy, Howard Moss, Harry Owens.

G00098   NMAH Catalog Number 1987.0487.425
 
TI number: G00098
Transistor, Silicon Epitaxial Planar - The item is one of the engineering laboratory devices of the first TI silicon transistor capable of operating at microwave frequencies. It was designed and built in 1963.

This item was part of the original S/B Lobby display. The epitaxial planar device was designed for oscillator amplifier applications and achieved a 2 GHz frequency limit. The transistor became a catalog item as the 2N3570 in 1964.

Summary comment by: Jack Abernathy, Roger Webster.

G00402   NMAH Catalog Number 1987.0487.427
 
TI number: G00402
Transistor, Silicon Grown Junction Power - This transistor was a special device version of the TI970 and 2N122 silicon power transistor. The long leads were used for a customer whose design required this length between the heat sink mounting and the electrical connections.

See G00046 for description of the TI970 and 2N122. These leads were impractical for handling in production and testing and were subsequently replaced. Short rigid leads were made as part of the header. Following production and testing, the long flexible leads were attached by spot welding so that the final device satisfied the mounting requirements.

Related material in collection: G00045, 46. Summary comment by: Jim Lacy, Howard Moss.

G00275   NMAH Catalog Number 1987.0487.432
 
TI number: G00275
Crystal, Silicon - This crystal represents early 1970's engineering work with increasing crystal diameter to 2".

The crystal was passed along with office changes from Rolf Haberecht to Werner Beyen to Dean Toombs to Bernie List. Toombs and Beyen have no additional background information. Reference sources need to be checked to determine possible importance.

Summary comment by: Olin Cecil, Rolf Haberecht.

   NMAH Catalog Number 1987.0487.462
 
TI number:
Photo Available Silicon Sculpture -



National Museum of American History


Home Search Chip Talk Chip Fun Patents People Pictures Credits Copyright Comments