1987.0487.212.01 Texas Instruments Collection Object

Silicon Power Transistors
TI number: G00167

These items are examples of silicon power transistors in the TO-3 package. This package has been used in production at TI with a wide variety of silicon and germanium chips.

The devices did not have the caps mounted. For the various silicon chips used, normally the rated power dissipation is 85W at 100 degrees C case; rated collector current is up to 30A continuous and the breakdown voltage about 80V. The header and cap are nickel plated copper sealed by a cold weld.

Related material in collection: G00168
Texas Instruments (Ed Allison; Jim Lineback.)

Contact Nance L. Briscoe for further information



National Museum of American History


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