1987.0487.224.02 Texas Instruments Collection Object

Silicon Power Transistors
TI number: G00163

These items are examples of silicon power transistors in the TO-61 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipaion is 67W at 100 degrees C case; rated collector current is up to 20A continous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00164.
Texas Instruments (Ed Allison, Jim Lineback.)

Contact Nance L. Briscoe for further information



National Museum of American History


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