|1987.0487.228||Texas Instruments Collection||Object|
|Silicon Grown Junction Transistor - 1954
TI number: G00124
This device, built April 14, 1954, was the first silicon transistor built by TI which exhibited useful transistor action. This development led to the announcement by TI of the first commercially available silicon transistor in May, 1954.
This item was part of the original S/B Lobby display and the 50th Anniversary exhibit. During a conversation with Jim Lacy, Mort Jones provided the following background information. This transistor was fabricated on April 14, 1954. Jones thinks it was first saved by Ed Jackson. It was put in a display and presented by Pat Haggerty to Jones of his tenth anniversary as a TI'er in August, 1963. This silicon grown junction transistor was the result of a program started in 1953 under Gordon Teal. On the development team were Willis Adcock, Ed Jackson, Mort Jones and Jay Thornhill. On May 10, 1954, a lengthy roster of speakers at the IRE National Conference on Airborne Electronics in Dayton, Ohio, predicted that silicon might be the answer in four or five years to the heat problem then limiting the use of germanium transistors. Gordon Teal, the final speaker on the program, reviewed the work done at TI and closed with the announcement that TI had silicon transistors for immediate delivery. To demonstrate their capability, he played a phonograph using TI transistors operating in oil at 150 degrees C. This startling disclosure echoed throughout the industry, and TI was on its way to becoming the leading semiconductor manufacturer. QRA checked this unit on 5/3/85. It had an open base lead. Collector to emitter breakdown (100 uA) was 4.5V. See Artifact Historical File for X-ray photos, a copy of Jones' notebook pages and talks by Adcock and Teal at the 25th anniversary observance.
Related material in collection: G00006,7.
|Texas Instruments (Willis Adcock, Mort Jones, Jim Lacy.)