1987.0487.232.01 Texas Instruments Collection Object

Silicon Grown Junction Transistor
TI number: G00128

The TI951-3 were the first medium power silicon grown junction transistors and were introduced in late 1954. The heat sink shown was supplied with each transistor. The dissipation rating was .750W at 25 degrees C.

Item was part of the original S/B Lobby display and was used in the 50th Anniversary exhibit. This series was constructed the same as the TI 901 series but was filled with a Dow Corning alumina filled silastic which required a heat curve prior to sealing.

Related material in collection: G00127, 336.
Texas Instruments (Norman Ince, Jim Lacy.)

Contact Nance L. Briscoe for further information

National Museum of American History

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